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Repairing method and application of phase change memory element

A phase-change memory and phase-change storage technology, which is applied in the direction of static memory, digital memory information, information storage, etc., can solve the problems of aging of phase-change memory materials

Active Publication Date: 2016-11-23
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Therefore, there is a need to provide a more advanced repair method for phase change memory elements to improve the aging problem of phase change memory materials faced by the prior art

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  • Repairing method and application of phase change memory element
  • Repairing method and application of phase change memory element
  • Repairing method and application of phase change memory element

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Embodiment Construction

[0053] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0054] The invention provides a repair method for a phase change memory element and its application, which can solve the aging problem of the existing phase change memory materials. In order to make the above-mentioned embodiments and other objects, features and advantages of the present invention more comprehensible, the digital 3D memory device and its manufacturing method are specifically cited below as preferred embodiments and described in detail with the accompanying drawings.

[0055] However, it must be noted that these specific implementation cases and methods are not intended to limit the present invention. The invention can still be implemented with other features, elements, methods and parameters. The proposa...

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Abstract

The invention discloses a repairing method of a phase-change memory element. The repairing method comprises the following steps: firstly, at least one storage unit is provided, and the storage unit contains a phase-change storage unit with a shift (shift) current-resistance characteristic function. Material. Next, a healing stress is applied to the phase-change memory material to convert the offset current-resistance characteristic function of the phase-change memory material into an initial current-resistance characteristic function. Wherein, the offset current-resistance characteristic function is a translation function of the current-resistance characteristic function.

Description

technical field [0001] The invention relates to a repair method for a phase-change memory element, in particular to a repair method for a phase-change memory element based on chalcogenide and other materials. Background technique [0002] Phase change based memory materials such as chalcogenides or other similar materials can be induced to change phase between an amorphous phase and a crystalline phase by applying a suitable electric current. The amorphous phase has a higher resistivity than the crystalline phase, which can be easily sensed for indicating data. Furthermore, these characteristics are used to fabricate a non-volatile memory that can be read or written in random access, that is, a phase change memory. [0003] The data of the phase change memory is stored through the conversion of the active region of the phase change material between the amorphous phase and the crystalline phase. For example, the phase-change material in the memory cell can be heated above a...

Claims

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Application Information

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IPC IPC(8): G11C13/00G11C29/44
Inventor 吴昭谊柯文昇李明修
Owner MACRONIX INT CO LTD
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