Alumina ceramic and its preparation method and plasma etching equipment

Abstract

The invention relates to an alumina ceramic and a preparation method thereof. The preparation method comprises the following steps: mixing an organic monomer, a crosslinking agent and a dispersing agent with water, and regulating the pH value to 9-10 to obtain a preblend solution; adding nano alumina powder and grain growth inhibitor powder into the preblend solution, and mixing to obtain the ceramic slurry of which the solid volume percent is 35-45% and the viscosity is lower than 1 Pa.s, wherein the particle size of the nano aluminum oxide powder is 5-40nm, and the particle size of the grain growth inhibitor powder is 5-50nm; adding a catalyst and an initiator into the ceramic slurry, and gelating to obtain a wet billet; and drying the wet billet, and sintering to obtain the alumina ceramic. The alumina ceramic prepared by the preparation method has favorable plasma corrosion resistance.

Description

technical field [0001] The invention relates to the field of ceramic materials, in particular to an alumina ceramic, a preparation method thereof, and plasma etching equipment. Background technique [0002] Plasma processing devices are widely used in semiconductor manufacturing, and are mainly used in processes such as etching and surface cleaning. Its working principle is to ionize the halogen-containing compound gases such as CF4 and C4F8 in the reaction chamber into plasma, and use the free radicals in the plasma to bombard or sputter the surface molecules of the material to be etched to form volatile substances, thereby realizing etching. the goal of. The components in the reaction chamber are exposed to the plasma and are subjected to different degrees of plasma corrosion. In addition to reducing the service life of the components and increasing the use cost of the plasma processing device, the metal / ceramic particles produced by the plasma corrosion will also pollute...

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Problems solved by technology

The components in the reaction chamber are exposed to the plasma and are subjected to different degrees of plasma corrosion. In addition to reducing the service life of the components and increasing the use cost of the plasma processing device, the metal / ceramic particles produced by the plasma corrosion will also pollute the reaction chamber. The chamber and the surface of the workpiece to be processed affect the quality of the workpiece to be processed

[0003] In order to improve the plasma corrosion resistance of components, a variety of technological measures have been taken, such as spraying inorganic coatings such as yttrium oxide and aluminum oxide on metal components, but the bonding force between the sprayed coating and metal components is not strong, and the inorganic The expansion coefficient of the coating and the metal component does not match, and there is a risk of falling off during use; at the same time, because the inorganic particles in the coating have not reached the sintered state, the bonding force between the particles is not enough, and it is easy to fall off under plasma corrosion. In addition, Sintered dense ceramic materials are also used to make components, such as alumina, yttrium oxide and other ceramic materials, which have a certain improvement in plasma corrosion resistance, but some sintering aids added in the preparation process of alumina, yttrium oxide and other ceramic materials It is easy to be corroded by plasma, and the coarse grains of ceramic materials grow abnormally during the sintering process, which not only causes poor microstructure of ceramics, but also makes it easier to be corroded and peeled off by plasma, which greatly shortens the service life of ceramic components. At the same time, the ceramic components After being corroded, ceramic particles will also contaminate the workpiece

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