Method For Forming Semiconductor Device Structure

Abstract

A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a semiconductor substrate. The method includes forming a mask layer over the dielectric layer. The mask layer has an opening exposing a portion of the dielectric layer. The method includes removing the portion of the dielectric layer through the opening to form a recess in the dielectric layer. The method includes removing the mask layer. The method includes performing a plasma cleaning process over the dielectric layer. The plasma cleaning process uses a carbon dioxide-containing gas.

Description

technical field [0001] The present invention relates generally to the field of semiconductors, and more particularly to methods for forming semiconductor device structures. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced several generations of ICs, each with smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of processing and manufacturing ICs. [0003] During the evolution of ICs, functional density (i.e., the number of interconnected devices per chip area) has generally increased as geometry size (i.e., the smallest component (or line) that can be produced using a fabrication process) has decreased . Typically, this scaling down process provides benefits by increasing production efficiency and reducing associated costs. [0004] However, manufacturing processes continue to...

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Problems solved by technology

[0004] However, manufacturing processes continue to become more difficult to implement as feature sizes continue to decrease

Thus, forming reliable semiconductor devices in increasingly smaller sizes is a challenge

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