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Semiconductor element and its manufacturing method

A manufacturing method and suppressor technology, which can be used in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as chip burnout

Active Publication Date: 2019-08-09
NUVOTON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When a large amount of electrostatic discharge current is generated, the chip will often be burned, so how to do a good job in electrostatic discharge protection has always been a topic that has received considerable attention

Method used

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  • Semiconductor element and its manufacturing method
  • Semiconductor element and its manufacturing method
  • Semiconductor element and its manufacturing method

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Embodiment Construction

[0032] ESD protection in integrated circuits can be protected by additionally providing circuit protection devices in integrated circuits, such as transient voltage suppressors (Transient Voltage Supressors; TVS). In addition to reducing the capacitance, the transient voltage suppressor also has the advantages of simple process, low cost and small size.

[0033] The transient voltage suppressor can be composed of N-type diodes, P-type diodes and Zener diodes. Transient voltage suppressors mainly use the breakdown voltage (Breakdown Voltage), leakage current (Leakagecurrent) and input / output-to-ground capacitance (Input / Output-to-Ground Capacitance) as the evaluation criteria for transient voltage suppressors. It is ideal for a transient voltage suppressor to have a high breakdown voltage, low leakage current, and low input / output capacitance to ground.

[0034] The transient voltage suppressor can be mainly manufactured in the following way: firstly, a silicon oxide photomask...

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Abstract

The invention provides a semiconductor element and a method for manufacturing the same. The method includes the steps of: performing a first ion implantation process by using photomask structure formed on a substrate so as to form a first dopping zone with a first conductive type; forming a plurality of internval walls on a side wall of the photomask structure; performing a second ion implantation process and forming a second dopping zone with a second conductive type under the first dopping zone; and forming a thick dopping zone with the first conductive type in the first dopping zone.

Description

technical field [0001] The embodiments of the present invention relate to a semiconductor element and its manufacturing method, and in particular to a circuit protection device and its manufacturing method. Background technique [0002] With the continuous advancement of electronic technology, electronic products have become an indispensable tool in people's lives. Integrated circuits play an even more important role in electronic products. By constructing integrated circuits, the circuit area of ​​electronic products can be greatly reduced, and integrated circuits can often provide high-performance computing capabilities to improve the overall performance of electronic products. [0003] Electrostatic discharge (ESD) has always been one of the main problems in integrated circuits. When a relatively large amount of electrostatic discharge current is generated, the chip will often be burned, so how to do a good job in electrostatic discharge protection has always been a top...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/60H01L21/027H01L21/265
Inventor 吕智勋陈柏安
Owner NUVOTON