A kind of all-inorganic qled and preparation method thereof

Abstract

The invention discloses a whole inorganic QLED and a preparing method thereof. The whole inorganic QLED comprises a substrate, an N-type semiconductor deposited on the substrate, a quantum dot, an N-type electrode, a P-type semiconductor and a P-type electrode, wherein the quantum dot and the N-type electrode are deposited on steps on the two sides of the N-type semiconductor respectively, and the P-type semiconductor and the P-type electrode are deposited on the quantum dot in sequence. The N-type semiconductor is prepared from one of n-GeAs, n-GeSb, n-SiAs and n-SiSb, and the P-type semiconductor is prepared from one of p-GeAs, p-GeSb, p-SiAs and p-SiSb. The semiconductor materials serve as electron and hole transmission layers of QLED devices, so that compared with structural materials based on semiconductors containing nitrogen and gallium, the electron mobility is higher, the charge transmissibility is higher, and thus the electron and hole combination rate is effectively increased; besides, by using the device structure for preparing the whole inorganic QLED, the preparing method is simple, and the service life of the devices can be effectively prolonged.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting diodes, in particular to an all-inorganic QLED and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) are expected to become the mainstream of the next generation of new display technologies due to their high device efficiency, good color purity, and low manufacturing cost. [0003] The main problem currently faced by quantum dot light-emitting diodes (QLEDs) is that the life of the device cannot meet the display requirements, especially blue light devices; the main factors for the low life of the quantum dot itself are the low life of the quantum dot itself and the polymer hole transport of the device. Layer is caused by acidity. While preparing quantum dots with good stability, in order to further improve the lifetime of QLED devices, replacing the hole transport layer of the device with metal oxide can effectively increase the lifetim...

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide an all-inorganic QLED and its preparation method, aiming to solve the problems of low electron mobility and low efficiency of all-inorganic QLEDs in existing nitrogen-containing gallium semiconductor materials

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