Light-emitting diode for improving ITO current expansion and manufacturing method thereof

Abstract

The invention discloses a light-emitting diode for improving ITO current expansion. An epitaxial layer is formed on a substrate, an ohmic contact layer is formed on the epitaxial layer, and an ITO current expansion layer is formed on the ohmic contact layer; the ITO current expansion layer is composed of a low-face resistance value ITO layer and a high-face resistance value ITO layer; the low-face resistance value ITO layer grows on the ohmic contact layer, and the high-face resistance value ITO layer and the low-face resistance value ITO layer circularly grow on the low-face resistance value ITO layer; the top layer is the low-face resistance value ITO layer, and the low-face resistance value ITO layer at the top is connected with a P-type electrode; each of the low-face resistance value ITO layer and the high-face resistance value ITO layer is composed of SnO2 and In2O3. The invention further discloses a manufacturing method of the light-emitting diode for improving the ITO current expansion. Through the adoption of the light-emitting diode disclosed by the invention, the ITO current expansion effect is effectively improved, the shading area of the electrode is reduced, the light extraction rate in an active area is improved, and the chip reliability is improved.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a light-emitting diode that improves ITO current expansion and a manufacturing method thereof. Background technique [0002] Such as figure 1 As shown, a light-emitting diode structure disclosed in the prior art, the epitaxial buffer layer 20, the unintentionally doped layer 30, the first-type conductive layer 40, the active region 50, and the electron blocking layer 60 are sequentially epitaxial on the substrate 10 from bottom to top. , the second type conductive layer 70 , the ohmic contact layer 80 and the ITO current spreading layer 90 . [0003] Usually, the ITO current spreading layer 90 is a single layer of indium tin oxide material. However, as the demand for increasing chip power increases, the chip area becomes larger and larger, so that the spreading effect of the ITO current spreading layer is limited. [0004] In order to improve the spreading effect ...

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Problems solved by technology

[0003] Generally, the ITO current spreading layer 90 is a single-layer indium tin oxide material. However, as the demand for increasing chip power increases, the chip area becomes larger and larger, so that the expansion effect of the ITO current spreading layer is limited.

[0004] In order to improve the spreading effect of the ITO current spreading layer, the existing technology usually adds spreading electrodes to improve the spreading effect of the current. However, the introduction of spreading electrodes not only increases the shading area of ​​the electrode, but also reduces the extraction of a part of light, and also increases the cost of the chip process. Complexity and cost, and the hidden danger of poor chip reliability

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