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Passive waveguide structure for optoelectronic devices

A technology of waveguide and optical transmitter, applied in the field of quantum cascade lasers, which can solve the problems of bulkiness and cost

Active Publication Date: 2016-12-14
THORLABS QUANTUM ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] External-cavity quantum cascade lasers have single-wavelength emission and wide tuning range, but they are usually expensive and bulky

Method used

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  • Passive waveguide structure for optoelectronic devices
  • Passive waveguide structure for optoelectronic devices
  • Passive waveguide structure for optoelectronic devices

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Embodiment Construction

[0021] The present invention can be understood more readily by reference to the following detailed description, drawings, examples and claims and the preceding and following descriptions thereof. However, before the compositions, articles, devices and methods of the present invention are disclosed and described, it is to be understood that, unless otherwise specified, the present invention is not limited to the particular compositions, articles, devices and methods and thus can, of course, be carried out Variety. It is also to be understood that the terminology used herein is for the purpose of describing particular aspects only and is not intended to be limiting.

[0022] The following description of the invention is provided as a teaching that enables the invention to be practiced in its presently known examples. To this end, those skilled in the art will recognize and appreciate that many changes can be made to the various aspects of the invention described herein while st...

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Abstract

Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Patent Application No. 61 / 946,700, filed February 28, 2014, the disclosure of which is incorporated herein by reference. [0003] This application is also related to provisional application serial number 61 / 732,289, filed November 30, 2012, and application number PCT / US2013 / 072195, filed November 27, 2013. technical field [0004] The present invention relates generally to quantum cascade lasers ("QCLs"), and more particularly to passive waveguide structures used in QCLs and to QCLs using such structures. Background technique [0005] A quantum cascade laser is a unipolar device. Unlike conventional direct-bandgap semiconductor lasers, quantum cascade lasers utilize intersubband transitions and typically emit in the mid-infrared ("mid-IR") or far-infrared ("far-IR") wavelength range. [0006] Mid-infrared sources are of interest for a variety of reasons. Strong a...

Claims

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Application Information

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IPC IPC(8): H01S5/20
CPCH01S5/20H01S5/026H01S5/06258H01S5/2031H01S5/3402
Inventor C·G·卡诺谢峰C·E·扎赫
Owner THORLABS QUANTUM ELECTRONICS