Semiconductor device and manufacturing method thereof

Abstract

Embodiments of the present invention provide a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a semiconductor layer prepared on one surface of a substrate, the semiconductor layer includes an active area and an inactive area located outside the active area; a plurality of A source electrode, a plurality of gate electrodes and a plurality of drain electrodes; a source electrode pad connected to the source electrode; a gate electrode pad connected to the gate electrode; a drain electrode pad connected to the drain electrode; A first through hole located in the passive area and penetrating the substrate and semiconductor layer, and electrically connecting the ground electrode and the source pad; and a first through hole located in the active area and penetrating the substrate and semiconductor layer layer, and a second via hole that electrically connects the ground electrode to the source electrode. Embodiments of the present invention can reduce the overall parasitic inductance of the device, alleviate the adverse effects of concentrated openings in existing semiconductor devices on heat dissipation of the device, and are beneficial to improving the gain and output power of the device.

Description

technical field [0001] The invention relates to the fields of microelectronics and semiconductor manufacturing methods, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Gallium nitride semiconductor materials have significant advantages such as large band gap, high electron saturation drift rate, high breakdown field strength, and high temperature resistance. Compared with the first-generation semiconductor silicon and the second-generation semiconductor gallium arsenide, it is more suitable for manufacturing High-temperature, high-voltage, high-frequency and high-power electronic devices have broad application prospects and have become a research hotspot in the semiconductor industry. [0003] Gallium Nitride High Electron Mobility Transistor (HEMT) is a GaN device formed by using the two-dimensional electron gas at the AlGaN / GaN heterojunction, which can be applied in the fields of high frequency, high voltage and hi...

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Problems solved by technology

However, since the through holes are all located on the same side opposite to the drain pad, the current in the active area flows in the same direction and is not scattered. The mutual inductance generated by the metal fingers in the active area is the strongest, and the current density on a single finger is the largest. When the device is working, the heat generation in the active area is the highest and concentrated; secondly, the distance from the source to the ground in the active area is increased, that is, the grounding inductance of the source is increased, which affects the performance of the device such as gain

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