Semiconductor device and manufacturing method thereof

Abstract

The embodiment of the invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a semiconductor layer, a plurality of source electrodes, a plurality of grid electrodes, a plurality of drain electrodes, a source pad, a grid pad and a drain pad, a grounding electrode, a first through hole and a second through hole, and is characterized in that the semiconductor layer is prepared at one surface of a substrate, and the semiconductor layer comprises an active region and a passive region which is located beyond the active region; the plurality of source electrodes, the plurality of grid electrodes and the plurality of drain electrodes are located in the active region; the source pad is connected with the source electrodes; the grid pad is connected with the grid electrodes; the drain pad is connected with the drain electrodes; the first through hole is located in the passive region, penetrates through the substrate and the semiconductor layer and enables the grounding electrode to be electrically connected with the source pod; and the second through hole is located in the active region, penetrates through the substrate and the semiconductor layer and enables the grounding electrode to be electrically connected with the source electrodes. The embodiment of the invention can reduce the overall parasitic inductance of the device, alleviate adverse effects imposed on device heat dissipation by centralized hole opening of an existing semiconductor device and be conducive to improving the gain and the output power of the device.

Description

technical field [0001] The invention relates to the fields of microelectronics and semiconductor manufacturing methods, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Gallium nitride semiconductor materials have significant advantages such as large band gap, high electron saturation drift rate, high breakdown field strength, and high temperature resistance. Compared with the first-generation semiconductor silicon and the second-generation semiconductor gallium arsenide, it is more suitable for manufacturing High-temperature, high-voltage, high-frequency and high-power electronic devices have broad application prospects and have become a research hotspot in the semiconductor industry. [0003] Gallium Nitride High Electron Mobility Transistor (HEMT) is a GaN device formed by using the two-dimensional electron gas at the AlGaN / GaN heterojunction, which can be applied in the fields of high frequency, high voltage and hi...

AI Technical Summary

Problems solved by technology

However, since the through holes are all located on the same side opposite to the drain pad, the current in the active area flows in the same direction and is not scattered. The mutual inductance generated by the metal fingers in the active area is the strongest, and the current density on a single finger is the largest. When the device is working, the heat generation in the active area is the highest and concentrated; secondly, the distance from the source to the ground in the active area is increased, that is, the grounding inductance of the source is increased, which affects the performance of the device such as gain

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