Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Mask cleaning method and cleaning device

A technology for cleaning device and mask, which is applied to cleaning methods, cleaning methods and utensils, chemical instruments and methods using gas flow, etc., and can solve problems such as unclean mask cleaning.

Inactive Publication Date: 2017-01-04
BOE TECH GRP CO LTD +1
View PDF7 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the invention is to solve the problem that the mask plate is not clean

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mask cleaning method and cleaning device
  • Mask cleaning method and cleaning device
  • Mask cleaning method and cleaning device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0048] The present invention provides a solution to the technical problem of unclean mask cleaning in the prior art.

[0049] On the one hand, embodiments of the present invention provide a mask cleaning method, such as figure 1 shown, including:

[0050] Detection step 11, determining the position information of the residual stain on the mask;

[0051] Cleaning step 12, according to the position information, illuminate the residual stains on the mask plate to decompose the residual stains, and use the ion wind to remove the residual stains on the mask plate; wherein, the ion wind can make the residual stains and the mask plate band Have the same charge, so that the residual stain and the mask will have a certain repulsion force, increasing the release...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a mask cleaning method and cleaning device. The cleaning method comprises: a detection step for determining the position information of residual stains on a mask; and a cleaning step for illuminating to decompose the residual stains on the mask, and removing the residual stains on the mask by ionic wind. After normal mask cleaning, some residual stains still exist. Generally, the residual stains are oily stains such as fingerprints left by technicians in a mask operation process; and in the cleaning method provided by the embodiment, the residual stains are positioned and then accurately illuminated according to the positioning effect, so that the residual stains are decomposed and loosened on the mask, and then the loose residual stains are blown off the mask by use of ionic wind to realize a cleaning effect.

Description

technical field [0001] The invention relates to the field of manufacturing film layers of display panels, in particular to a method and a cleaning device for cleaning a mask. Background technique [0002] In the field of display, exposure is the most important link in the production of TFT panels. Exposure realizes the transfer of the pattern on the mask plate to the photoresist PR. After the PR forms a pattern, the film layer on the substrate is etched accordingly, and the film layer has a pattern. [0003] Mask The mask is an important tool in exposure, and the quality of the mask determines the quality of the circuit on the subsequent TFT substrate. As the mask mask is used for a long time, its surface will deposit visible and invisible stains. As the exposure equipment ages, oily stains will even be deposited on the surface of the mask mask, resulting in poor repeatability of the pattern transferred to the substrate, which will bring huge losses to production. [0004...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B08B5/02B08B13/00G03F1/82
CPCB08B5/02B08B13/00G03F1/82
Inventor 刘小波金宇苏琦黄文同满志金李亚文
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products