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Programming method for MTM antifuse PROM

A programming method and anti-fuse technology, which is applied in the field of MTM anti-fuse PROM programming, can solve problems such as misprogramming, and achieve the effects of avoiding misprogramming, optimizing programming algorithms, and improving the success rate of programming

Active Publication Date: 2017-01-18
58TH RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved in the present invention is to overcome the existing defects, provide a programming method suitable for MTM antifuse PROM, solve the problem of misprogramming in the programming process of MTM antifuse PROM, and improve the programming success rate of the chip. Improved reliability of antifuse PROM circuits after programming

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  • Programming method for MTM antifuse PROM
  • Programming method for MTM antifuse PROM
  • Programming method for MTM antifuse PROM

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Embodiment Construction

[0022] The embodiments listed in the present invention are only used to help understand the present invention, and should not be interpreted as limiting the protection scope of the present invention. For those of ordinary skill in the art, they can also Improvements and modifications are made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

[0023] like figure 1 As shown, the right side is the MTM antifuse PROM circuit 1 including antifuse F1-F6, wherein F1-F6 are anti-fuse, M1-M6 are programming current-limiting tubes, and N1-N6 are pre-charging control tubes. The initial state of antifuse F1~F6 is off state. To program an antifuse, MTM antifuse PROM programmer 2 programs the MTM antifuse PROM through five ports ADR, DQ, PEN, CEN, and OEN. Circuit 1 applies a signal, opens the corresponding w (w1~w2) switch through the addressing and programming circuit 11 inside the circuit and ...

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Abstract

The invention relates to a programming method for MTM (metal-to-metal) antifuse PROM (Programmable Read-Only Memory). The method comprises the following steps: carrying out programming pre-charging before applying each programming pulse on antifuse which is to be programmed; giving a PROM circuit a thermal relaxation time after completing the last programming pulse and before applying the next programming pulse; grouping the programming pulse for two in one group, carrying out programmable current Ipp detection during the secondary programming pulse of each group of programming pulse, and carrying out the byte data reading verification after completing each group of programming pulse; and carrying out full data reading verification after completing all byte-programming. By the programming method, error programming of the antifuse can be effectively avoided, and programming success rate of a chip is raised. By optimizing the programming algorithm, reliability of the antifuse PROM circuit is raised after programming.

Description

technical field [0001] The invention belongs to the technical field of programmable antifuse, and relates to a programming method suitable for MTM antifuse PROM. Background technique [0002] Antifuse is a very important programmable interconnect unit. MTM (metal-to-metal) antifuse has been widely used in field programmable gate array (Field Programmable GateArray, FPGA) and programmable memory (Programmable Read-OnlyMemory, PROM). In a specific integrated circuit, the antifuse unit is located between the top metal N layer and the N-1 layer metal. The antifuse is in the off state before programming, and the antifuse is programmed by the thermal effect of the programming current. The post-antifuse transitions from the off state to the on state, forming a low-resistance connection. [0003] The manufacture of anti-fuse requires a special process, and currently only a few foreign companies have mastered this technology. Due to the important role of MTM antifuse, research and...

Claims

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Application Information

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IPC IPC(8): G11C17/16
Inventor 马金龙孙杰杰封晴吴素贞于跃王栋徐睿
Owner 58TH RES INST OF CETC
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