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A programming method suitable for mtm antifuse prom

A programming method and antifuse technology, which is applied in the field of MTM antifuse PROM programming, can solve problems such as misprogramming, and achieve the effects of avoiding misprogramming, improving the success rate of programming, and improving reliability

Active Publication Date: 2019-08-20
58TH RES INST OF CETC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved in the present invention is to overcome the existing defects, provide a programming method suitable for MTM antifuse PROM, solve the problem of misprogramming in the programming process of MTM antifuse PROM, and improve the programming success rate of the chip. Improved reliability of antifuse PROM circuits after programming

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  • A programming method suitable for mtm antifuse prom
  • A programming method suitable for mtm antifuse prom
  • A programming method suitable for mtm antifuse prom

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Embodiment Construction

[0022] The examples listed in the present invention are only used to help understand the present invention, and should not be construed as limiting the scope of protection of the present invention. For those of ordinary skill in the art, without departing from the idea of ​​the present invention, Improvements and modifications are made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

[0023] Such as figure 1 As shown, the right side is an MTM anti-fuse PROM circuit 1 containing anti-fuse F1 to F6, where F1 to F6 are anti-fuse, M1 to M6 are programmed current limiting tubes, and N1 to N6 are precharge control tubes. The initial state of the anti-fuse F1~F6 is off. If you want to program a certain anti-fuse, the MTM anti-fuse PROM programmer 2 uses the five ports of ADR, DQ, PEN, CEN, OEN to MTM anti-fuse PROM Circuit 1 applies a signal, turns on the corresponding w(w1~w2) switch throug...

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Abstract

The invention relates to a programming method for MTM (metal-to-metal) antifuse PROM (Programmable Read-Only Memory). The method comprises the following steps: carrying out programming pre-charging before applying each programming pulse on antifuse which is to be programmed; giving a PROM circuit a thermal relaxation time after completing the last programming pulse and before applying the next programming pulse; grouping the programming pulse for two in one group, carrying out programmable current Ipp detection during the secondary programming pulse of each group of programming pulse, and carrying out the byte data reading verification after completing each group of programming pulse; and carrying out full data reading verification after completing all byte-programming. By the programming method, error programming of the antifuse can be effectively avoided, and programming success rate of a chip is raised. By optimizing the programming algorithm, reliability of the antifuse PROM circuit is raised after programming.

Description

Technical field [0001] The invention belongs to the technical field of programmable anti-fuse and relates to a programming method suitable for MTM anti-fuse PROM. Background technique [0002] Anti-fuse is a very important programmable interconnect unit. MTM (metal-to-metal) anti-fuse has been widely used in Field Programmable Gate Array (FPGA) and Programmable Read-Only Memory (PROM). In a specific integrated circuit, the anti-fuse unit is located between the top metal N layer and the N-1 layer metal. The anti-fuse is in the off state before programming. The anti-fuse is programmed by the thermal effect of the programming current. The rear anti-fuse changes from the off state to the on state, forming a low resistance connection. [0003] Anti-fuse manufacturing requires a special process, and currently only a few foreign companies have mastered this technology. Due to the important role of MTM anti-fuse, domestic research and technological research on key technologies including...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C17/16
Inventor 马金龙孙杰杰封晴吴素贞于跃王栋徐睿
Owner 58TH RES INST OF CETC
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