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Automatic Calibration Calibration Method Based on Wafer Corner and Notch Positioning

An automatic correction and wafer technology, applied in image analysis, image enhancement, instruments, etc., can solve problems such as excessive beam measurement position deviation, positioning failure, and reduced positioning process efficiency, so as to improve efficiency, good positioning accuracy, and improve The effect of degree of automation

Active Publication Date: 2020-01-14
RAINTREE SCI INSTR SHANGHAI
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Problems solved by technology

However, the wafer translation and rotation errors generated during the process are not considered, so it will inevitably lead to excessive deviation of the measurement position of the beam during each measurement, and the result that the measurement repeatability cannot be guaranteed.
[0005] In addition, in the process of wafer positioning, it is usually positioned by pattern recognition technology. In such a method, a pattern recognition threshold is usually set. When the pattern recognition threshold is lower than the pattern recognition threshold, the positioning fails, which will require Manual intervention to identify whether the wafer is available and how to perform manual positioning, on the one hand, such a positioning process cannot make full use of existing wafer resources, on the other hand, it also greatly reduces the efficiency of the positioning process

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  • Automatic Calibration Calibration Method Based on Wafer Corner and Notch Positioning
  • Automatic Calibration Calibration Method Based on Wafer Corner and Notch Positioning
  • Automatic Calibration Calibration Method Based on Wafer Corner and Notch Positioning

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Embodiment Construction

[0038] In the following detailed description of the preferred embodiment, reference is made to the accompanying drawings which form a part hereof. The accompanying drawings show, by way of example, specific embodiments in which the invention can be practiced. The illustrated embodiments are not intended to be exhaustive of all embodiments in accordance with the invention. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description is not limiting, and the scope of the invention is defined by the appended claims.

[0039] When measuring the wafer, there are two main factors that cause low test repeatability during the loading process of the wafer:

[0040] 1. The translation of the upper wafer, that is, the coordinate value of the center of the upper wafer in the system coordinate system;

[0041] 2. The rotation of the up...

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Abstract

The invention provides an automatic correction calibration method based on wafer corner and notch orientation. The method comprises the steps that moving to a positioning position and searching for the positioning position are carried out; if the searching fails and the positioning set of the positioning position is the last, correction calibration is carried out based on wafer corner and notch orientation positioning; a pattern recognition threshold is lowered, and a first positioning position is searched; and the recognition image of the first positioning position is stored. According to the invention, when a system positions a wafer, the positioning precision is great; the automation degree of wafer positioning is enhanced by adding the corresponding recognition image of the first positioning position; and the positioning efficiency of the system is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing equipment, in particular to an automatic calibration method based on wafer corner and notch positioning. Background technique [0002] Ellipsopolarization technology is widely used in the semiconductor production industry. Due to its non-destructive and high-speed characteristics, it has become the main technology for the measurement of wafer surface material characteristics and optical critical dimensions. [0003] With the development of semiconductor technology, the critical dimension of integrated components has progressed from 1μm to 22nm, and the corresponding requirements for the accuracy and repeatability of ellipsometry have been reached order of magnitude. For unpatterned wafers, the non-uniformity of its surface film thickness is much more than order of magnitude. Therefore, even if there is a small difference in the positioning position of the measurement beam on the waf...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/68G06T7/70
CPCG06T7/0004G06T2207/10004G06T2207/30148H01L21/681
Inventor 周坚陈星
Owner RAINTREE SCI INSTR SHANGHAI