Method for evaluating accuracy of optical proximity correction model

A technology of optical proximity correction and model, which is applied in the semiconductor field to achieve the effect of reliable optical proximity correction

Active Publication Date: 2017-01-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is currently a lack of an effective method to evaluate the accuracy of the OPC model to ensure that the model is applied to a complete chip design

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  • Method for evaluating accuracy of optical proximity correction model
  • Method for evaluating accuracy of optical proximity correction model
  • Method for evaluating accuracy of optical proximity correction model

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[0019] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0020] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0021] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the / the" are intended to include...

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Abstract

The invention provides a method for evaluating the accuracy of an optical proximity correction model. The method comprises the following steps: mapping an optical proximity correction model into a vector space formed by fitting parameters of the optical proximity correction model, so as to build a first model indicated by a first vector; determining the first direction inside the vector space, wherein the threshold value calculated by the optical proximity correction model changes fastest in the first direction; moving the first model in the first direction according to the quantity on schedule so as to build a second model indicated by a second vector; calculating the difference from the first critical dimension of the first model to the second critical dimension of the second model at the aim of different given pitches, so as to obtain the accuracy of the optical proximity correction model. The method for evaluating the accuracy of the optical proximity correction model can be used for effectively evaluating the accuracy of the optical proximity correction model, thereby achieving more reliable optical proximity correction.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a method for evaluating the accuracy of an Optical Proximity Correction (OPC) model. Background technique [0002] As the complexity of integrated circuits increases, the feature size becomes smaller and smaller. When the feature size of the integrated circuit is close to the system limit of the exposure of the lithography machine, that is, when the feature size is close to or smaller than the lithography light source, the layout produced on the silicon wafer will be obviously distorted. This phenomenon is called the optical proximity effect. In order to deal with the optical proximity effect, a resolution enhancement technique is proposed. Among them, Optical Proximity Correction (OPC) has become the most important technology. [0003] With the development of technology to update the direction of smaller key size, the accuracy of OPC technology is also put forwa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36
Inventor 杜杳隽
Owner SEMICON MFG INT (SHANGHAI) CORP
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