Low-voltage high-power driving circuit for servo motor control

A drive circuit and servo motor technology, applied in the field of excitation or armature current control, output power conversion device, electrical components, etc., can solve difficult problems and achieve light weight and low power consumption effect

Inactive Publication Date: 2017-02-08
JIANGXI HONGDU AVIATION IND GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current high-power switching devices are still dominated by IGBTs, and it is difficult to meet the requirements of future drivers for power switching devices; compared with IGBTs, MOSFETs have the advantages of small size, light weight, fast switching speed, and low power consumption. For areas with strict requirements on volume, weight and power consumption, the disadvantage is that it is still difficult to achieve super power like IGBT; therefore, it is very important to develop high-performance, light-weight, fast-response, and low-power MOSFET servo drives. economic and social benefits

Method used

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  • Low-voltage high-power driving circuit for servo motor control
  • Low-voltage high-power driving circuit for servo motor control
  • Low-voltage high-power driving circuit for servo motor control

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Embodiment Construction

[0013] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.

[0014] A low-voltage high-power drive circuit for servo motor control, including a signal isolation circuit, a gate-level drive circuit, and a MOSFET tube circuit, wherein the input of the signal isolation circuit is connected to a PWM signal, and the output of the signal isolation circuit is connected to the gate The input ends of the drive circuit are connected, the output end of the gate-level drive circuit is connected with the input end of the MOSFET tube circuit, the output end of the MOSFET tube circuit is connected with the servo motor, and the servo motor is driven by controlling the MOSFET tube circuit.

[0015] A driver chip is provided in the gate-level drive circuit, and the driver chip adopts the IR2108 gate-level driver chip of IR ...

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Abstract

The invention relates to a low-voltage high-power driving circuit for servo motor control. The low-voltage high-power driving circuit comprises a signal isolation circuit, a gate driving circuit and an MOSFET circuit; PWM signals are connected into the input end of the signal isolation circuit; the output end of the signal isolation circuit is connected with the input end of the gate driving circuit; the output end of the gate driving circuit is connected with the input end of the MOSFET circuit; the output end of the MOSFET circuit is connected with a servo motor; and the servo motor can be driven through controlling the MOSFET circuit. According to the low-voltage high-power driving circuit for servo motor control of the invention, an MOSFET is applied to the high power field. With the power driving circuit adopted, the miniaturization, light weight and low power consumption of a servo driver can be realized, so that the requirements of the driver, for a power switching device, can be satisfied.

Description

technical field [0001] The invention relates to the technical field of servo motor drive, in particular to a low-voltage high-power drive circuit for servo motor control. Background technique [0002] With the rapid development of intelligent industry, national defense, aviation, industrial control and other industries and the continuous improvement of power electronic devices, electromechanical servo technology has also risen rapidly; especially in the aerospace field, miniaturization and light weight of high-power electromechanical servo drives , fast response, and low power consumption requirements are getting higher and higher. However, the current high-power switching devices are still dominated by IGBTs, and it is difficult to meet the requirements of future drivers for power switching devices; compared with IGBTs, MOSFETs have the advantages of small size, light weight, fast switching speed, and low power consumption. For areas with strict requirements on volume, wei...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02P7/29
CPCH02M1/08H02P7/29
Inventor 郑友胜齐洪豪曹雄伟陈林杰
Owner JIANGXI HONGDU AVIATION IND GRP
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