50 results about "High-power field" patented technology

The invention provides an enhanced GaN heterojunction field effect transistor based on metal oxide semiconductor (MOS) control and belongs to the technical field of power semiconductor devices. The enhanced GaN heterojunction field effect transistor comprises a monolithic integrated low-voltage MOS tube and a depletion mode GaN heterojunction field effect transistor, wherein the drain of the MOS tube is connected with the source of the depletion mode GaN heterojunction field effect transistor; the grid of the MOS tube and the grid of the depletion mode GaN heterojunction field effect transistor are connected with each other or the grid of the GaN heterojunction field effect transistor is connected with the source of the MOS tube; and the MOS tube and the depletion mode GaN heterojunction field effect transistor are isolated from each other by using a medium isolation slot. In the enhanced GaN heterojunction field effect transistor based on MOS control, transformation from the depletion mode GaN heterojunction field effect transistor to the enhanced GaN heterojunction field effect transistor is realized by controlling an on/off state of the low-voltage MOS tube connected in series with the depletion mode GaN heterojunction field effect transistor; the enhanced GaN heterojunction field effect transistor has the normally off characteristic of the low-voltage MOS tube and the advantages of high-voltage resistance, low-conductivity resistance and the like of the depletion mode GaN heterojunction field effect transistor, has good frequency characteristic and high output power and density, and is applicable to the high-frequency and high-power fields.

The invention belongs to the technical field of radiation-resistant semiconductors. The invention provides a novel LDMOS power device structure which can greatly enhance the total dose effect reinforcement capability of an LDMOS device. LDMOS devices are often used in high-voltage high-power fields. For an LDMOS device withstanding a working voltage of 20V, the thickness of the high-voltage-resistant gate oxide layer is usually dozens of micrometers. The invention, in view of the total dose effect sensitivity of a thick gate oxide layer, provides a method for introducing a thin gate oxide structure into a region close to the source of the thick gate oxide layer in order to form a novel LDMOS device having double gate oxide layers. The novel LDMOS device has beneficial effects that the newly introduced thin gate oxide region still turns off the entire LDMOS device when the high-voltage-resistant thick gate oxide region is affected by a serious space radiation total dose effect; due to the case that the anti-total dose effect capability of the thin oxide layer is better than that of the thick gate oxide, the leakage current between the source and the drain can be suppressed, so thatthe LDMOS device can obtain a good total dose reinforcement effect; and the structure cannot causes other problems such as an increase in area and process incompatibility.

The invention relates to a preparing method based on a P-type nanometer diamond thin film/(100) directed diamond thin-film field-effect photo-electric detector, which belongs to the technical field of the production technology of field-effect photo-electric detectors. The invention is characterized in that the Schottky field-effect structure is used, and the P-type nanometer diamond thin film is used as the surface P-type ditch layer. The P type of the nanometer diamond thin film is not obtained by being mixed with other elements but etching the hydrogen ions and other ions to obtain the H-terminal P-type nanometer diamond layer. The invention has another characteristic that the traditional silicon-substrate technology is not used, thereby being beneficial to the application of the detector in high-temperature, high-frequency and high-power fields and bad environments.

The invention provides an energy-saving drive device for a low-voltage electromagnetic type electric appliance. The energy-saving drive device is characterized in that by the adoption of a PWM technology, an electricity-saving pulse width modulation program is used for controlling pulse width modulation to change the duty ratio, so that breakover currents of a high-power field effect tube enter a control mode with the duty ratio accounting for 20% of time for opening, and square waves, with the duty ratio of 20%, of working frequency are generated; starting and stop buttons are arranged, and a single-chip microcomputer energy-saving drive circuit module comprising an electricity-saving program is integrated into a control circuit of application equipment, and connected among a power source, a starting and stop signal input end and a low-voltage electromagnetic type electric appliance coil to form the energy-saving drive device; the energy-saving drive device can be suitable for low-voltage electromagnetic type electric appliances of different types as long as rated voltage is provided, and reverse voltage withstand parameters of the power tube in the circuit are selected; the energy-saving module circuit can also be made into an independent product and installed along with the low-voltage electromagnetic type electric appliance; or the energy-saving module circuit is embedded into the appliance to be made into the energy-saving low-voltage electromagnetic type electric appliance. Power consumption of the low-voltage electromagnetic type electric appliance is greatly reduced, and the defect of directly cutting off electricity of the low-voltage electromagnetic type electric appliance is overcome.

The invention relates to the electromechanical servo system motor driving technical field, and particularly discloses an MOSFET-based power driving circuit. The driving circuit includes an optical coupling isolation circuit, a driving chip, totem pole output circuits and MOSFETs; PWM signals are accessed into the input end of the optical coupling isolation circuit; the output end of the optical coupling isolation circuit is connected with an input end of the driving chip; two output ends of the driving chip are respectively connected with the gates of an MOSFET B and an MOSFET A through two totem pole output circuits in mirror symmetry, wherein the MOSFET B and the MOSFET A are in series connection, and therefore, the MOSFET B and the MOSFET A can be switched on and switched off simultaneously. With the MOSFET-based power driving circuit of the invention adopted, the application of the MOSFETs in a high-power field can be realized, and the monopoly of IGBTs in the field can be broken; and the miniaturization, light weight and low power consumption of servo drives can be realized.

The invention relates to a MESFET (Metal-Semiconductor Field Effect Transistor) with a stepped buffer layer structure, belonging to the technical field of power semiconductor devices. The buffer layer becomes stepped by etching an epitaxial buffer layer of the device, so that an active layer epitaxially growing on the buffer layer has varying channel thickness. The thickest part of the buffer layer is right below a gate electrode, and the thickness of the buffer layer below both sides of the gate electrode is small. The active layer is reversely stepped, the thinnest part of the active layer is right below the gate electrode, and the thickness of the active layer below both sides of the gate electrode is large. The MESFET with the stepped buffer layer structure has the advantages of good DC characteristic, frequency characteristic and output power density, and is applicable to microwave and high power fields.

The invention relates to a preparation method of a high-temperature and high-power metal-oxide-semiconductor field effect transistor (MOSFET) based on a p-shaped boron-doped single-crystal diamond film, which belongs to the technical field of production processes of inorganic nonmetal metal devices. The preparation method is mainly characterized by comprising the following steps: producing a source electrode, a drain electrode and a grid electrode on the p-shaped boron-doped single-crystal diamond film; using gold electrodes as the source electrode and the drain electrode and using a lead electrode as the grid electrode; and adopting SiOx as an insulating layer between the grid electrode and a p-shaped diamond film. The p-shaped boron-doped single-crystal diamond film is deposited by adopting a microwave plasma chemical vapor deposition method (MPCVD) and a semiconductor field effect transistor device is prepared on the basis. The stable work temperature of the device can reach 690DEG C.

The invention provides a fundamental inertia tester, comprising an IGBT control casing, a speed sensor assembly and a computer, wherein, the IGBT control casing comprises a microprocessor and a high power field effect transistor, and is electrically connected with the speed sensor assembly, the computer, a force sensor on a chassis dynamometer and an electric eddy current machine; the IGBT achieves constant force control to the electric eddy current machine, measures signals transmitted from the speed sensor assembly and the force sensor through twice load coast-down of constant forces F1 and F2 respectively, and measures the speed of a roller and a medium value of actual measured resistances; and a computer program measures and controls the whole measurement process and calculates the measurement result according to the computing formula of the fundamental inertia. The fundamental inertia tester has the advantages of accurate measurement, good repetitiveness, easy operation, capability of measuring the automobile chassis dynamometer in using field and convenient portability.

Provided is a high power super capacitor including: a bobbin; an electrode assembly being wound into the bobbin to be in a jellyroll type; a conductive connection member being formed in each of one end and another end of the electrode assembly using electric energy; and a plug being inserted into each of one end and another end of the bobbin, and being bonded with the conductive connection member using electric energy to be electrically connected to the electrode assembly. The electrode assembly may include a first electrode plate having a first polarity and including an inactive material area collector where the conductive connection member is formed in the one end of the electrode assembly, a second electrode plate having a second polarity and including another inactive material area collector where the conductive connection member is formed in the other end of the electrode assembly, and a separator being disposed between the first electrode plate and the second electrode plate to insulate between the first electrode plate and the second electrode plate. Accordingly, the high power super capacitor may increase a contact area without decreasing an area of electrode active material layer and may decrease an equivalent series resistance by forming a conductive connection member using electric energy, thereby enhancing an exothermic characteristic and being applied to a high power field.

The invention discloses a high-performance silicon-carbon composite with a core-shell structure, and a preparation method and an application of the silicon-carbon composite in a lithium ion battery, and belongs to the technical field of lithium ion battery materials. The preparation method comprises the steps of ball-milling large particle silicon powder, mixing the treated silicon powder, a compound of lithium oxide and titanium oxide, graphitized carbon black, expanded graphite and a carbon nano tube for ball-milling, and separating a zirconium ball at last to form the silicon-carbon composite. A micron silicon particle serves as a core part; the expanded graphite serves as a shell part to coat the silicon particle and mainly exerts effects of conducting electricity and inhibiting volumeexpansion of silicon; the graphitized carbon black and the carbon nano tube serve as a conduction agent to improve conductivity of the composite; and the compound of the lithium oxide and titanium oxide has the characteristic of zero stress and exerts a support effect on the whole core-shell structure. The composite can serve as a cathode material of the lithium ion battery in the high-power field of new energy electromobiles and the like and has higher specific capacity, good long-period cycle performance and excellent rate capability.

The invention belongs to the technical fields of electronics and power supplies and discloses a high-power adjustable voltage-stabilized power supply manufactured by a reference voltage source. The voltage-stabilized power supply consists of an alternating current (AC) transformer B and a full-bridge rectifying circuit, a half-wave rectifying and filtering circuit, an adjusting tube BG1, a sampling amplifying circuit, a current-limiting protection circuit and a voltage-dividing and sampling circuit, and is characterized in that: the sampling amplifying circuit consists of a three-end adjustable current-dividing reference voltage source IC1 and a resistor R1; the adjusting tube BG1 is an enhanced N-channel high-power field-effect tube; the current-limiting protection circuit consists of a silicon triode BG2 and a current sampling resistor R2; and the voltage-dividing and sampling circuit consists of a potentiometer RP and a voltage-dividing resistor R3. The adjustable voltage-stabilized power supply outputs heavy current and adjustable voltage, the circuit has an overcurrent protection function, and particularly the conversion efficiency and working reliability of the adjustable voltage-stabilized power supply are improved.

The invention discloses a diamond power transistor and a preparing method thereof. The diamond power transistor comprises a hydrogen terminal diamond, a source electrode, a drain electrode and a gate electrode. The source electrode and the drain electrode of the diamond power transistor adopt an annular structure. The gate electrode is provided with a field plate structure. According to the invention, the annular structure is adopted, the current distribution when the transistor works is effectively improved, and the electric field concentration phenomenon is effectively improved, so that the breakdown voltage of the device can be obviously increased; the gate electrode adopts the field plate structure, the current distribution of the gate electrode is improved, and the breakdown voltage of the device can be further increased; in addition, the diamond power transistor of the structure is high in voltage resistance and can be used in the high-voltage high-power field.

A method and apparatus for aligning microscope images. Microscope images of the same or very similar subjects provided by different microscopes are aligned. The images from two types of microscope, such as a Virtual Microscope (VM) and a Light Microscope (LM) are used. An image produced by the virtual microscope is easily read by a viewer, as it represents a scan of a whole slide rather than individual high power fields of view. An area of the image can be selected for further examination or objective analysis by the LM microscope. The qualitative or quantitative information obtained from the Light microscope using the method described may then be located back into the virtual microscope image to provide understandable context.

The invention discloses a high-power adjustable DC (Direct Current) stabilized voltage power supply. The high-power adjustable DC stabilized voltage power supply is composed of a 220 V AC (Alternating Current), an AC step-down transformer, a full-bridge rectifier circuit, a sampling circuit, a sampling signal amplification and current-limiting protection circuit and a voltage division circuit, wherein an adjusting tube VT1 in the sampling signal amplification and current-limiting protection circuit adopts an enhanced N-channel high-power field-effect tube; and the selected type is 2SK790. As the adjusting tube in the former high-power serial adjustable stabilized voltage power supply almost adopts a high-power NPN type transistor or PNP type transistor, the disadvantage is that the adjusting tube is great in power consumption, thereby causing very low power conversion efficiency. By regarding a high-precision three-end adjustable branch reference voltage source TL431 as the core and adopting the enhanced N-channel high-power field-effect tube as the adjusting tube, the high-power adjustable DC stabilized voltage power supply, disclosed by the invention, not only can output a big current and adjust the outputting voltage, but also can improve conversion efficiency and reliability of the power supply greatly.

The invention discloses an electronic switching unit without energy consumption for a standby power supply of a model airplane receiver. Along with the constant development and popularization of model airplane activities, amateurs who are high on large-level model airplanes become more and more, but a lot of amateurs are only equipped with the cognitive level on that airborne equipment of small-class model airplanes consumes power and usually ignore or forget the state of charge of the battery of the model airplane receiver during outfield flight, so that non-maneuvering accidents caused by the power shortage of the receiver usually occur. According to the power consumption characteristics of the model airplane receiver and a steering engine as well as the technical requirements for a battery pack, the invention solves the problem that when the model airplane receiver is short of power in the air, the standby power supply can be quickly and directly switched to for the emergency power supply of the receiver, and can effectively control airplane crash accidents caused by the power shortage of the battery pack of the model airplane receiver. The electronic switching unit is formed by that a design idea of computer online emergency power supply, which is quick in response, is borrowed, a micro-power consumption voltage detector is used as a core, a P-channel high-power field effect transistor is used as a switching actuating element for a main power supply and the standby power supply, a few discrete electronic elements are used as supplement elements, and a circuit not only has simple and direct and reliable structure, but also has no need of debugging.

The invention provides a nutation surface gear transmission structure which is similar to the petal structure of a lotus flower in the natural world and can form multiple contact lines, motion and power transmission is completed, and a parallel shaft output symmetric variable-speed gear transmission device can be formed. Through the design of the symmetrical structure, parts of axial loads generated when a nutation disc moves is offset, and the advantages of the compact structure, large coincidence, the small volume, few parts, the large transmission ratio, strong bearing capacity and the likeare achieved, and the symmetrical structure variable-speed transmission device having the good application prospect is realized in the high-power fields such as helicopters and shield machines.

The invention discloses a stage lighting adjustment system and a method. The system comprises a DC power supply module, a DMX signal input module, a DSC digital signal controller and a plurality of output channels. The DMX signal input module is connected to the DSC digital signal controller. Each output channel is corresponding to LED lamps having a certain color, and comprises a controlled powerregulator, an anti-oscillation power compensation filter module, a PWM control signal controlled voltage divider, a signal superimposed voltage follower, a current cut-off negative feedback module, acurrent negative feedback module, a high power field-effect tube, a power resistor current detection module and a substrate temperature collection module. The invention not only can realize fine dimming, but also make the color rich and vivid, the service life is prolonged, the stability is increased, and the demand of the professional stage is met to the maximum extent.

The invention relates to a Nile tilapia sex chromosome DNA (deoxyribonucleic acid) library construction method, belonging to the technical field of molecular biology. The method comprises the following steps: Nile tilapia head-kidney cell culture, cell hypotonic treatment, cell fixation, tabletting, chromosome cutting, separation, enzyme digestion and joint connection, amplification and recovery, and segment sequencing and analysis. The method is standardized, and is simple to operate. The proportion of lymphocytes in the chromosome separation phase prepared from the head-kidney cells is higher than that of hemocytes, thereby ensuring the favorable chromosome separation phase in the same visual field, and obviously enhancing the tabletting efficiency. By using the method, the neutral chromosome can be obviously distinguished from other chromosomes in the high power field. The method has the advantages of high cutting stability and high repetitiveness, lowers the separation difficulty of the Nile tilapia sex chromosome, and enhances the library construction specificity.

The invention discloses a wiper motor speed regulation system with pulse-width modulation and voltage regulation, which comprises a signal processing module, an integrated controller and a motor driving control module. The wiper motor speed regulation system provided by the invention belongs to an integrated circuit modularization pulse-width modulation and voltage regulation (PMC) system, so a wiper motor only needs a pair of electric brushes, coils do not need phase shift voltage division, and the motor efficiency can reach the optimum no matter whether the speed is high or low. A contactless high-power field effect transistor (high-power metal oxide semiconductor (MOS) tube) is adopted for replacing a relay in the existing prior, the operation reliability of a motor is improved, simultaneously, and the interference generated when replay contacts are opened or closed can also be effectively avoided. In addition, an overcurrent detection circuit and relative overload protection programs are integrated on the signal processing module, the reliability of a motor protecting system is improved, and the service life of the wiper motor is prolonged. An electromagnetic magnetic compatibility (EMC) anti-interference circuit is integrated on the integrated controller, and the production cost of the wiper motor is effectively reduced.

The invention provides a programmable electronic load for analog electronic technique teaching. The programmable electronic load comprises a voltage-controlled current source unit, an A/D conversion unit, a D/A conversion unit, an MCU control unit, a keyboard unit and a display unit, wherein the voltage-controlled current source unit is composed of a high power field-effect tube Q1, a current sampling resistor R1 and an operational amplifier U1. According to the invention, a voltage-controlled current source is used as an electronic load, the output voltage of the D/A conversion unit is controlled by the MCU control unit, and then the output voltage of the D/A conversion unit controls the output current of the voltage-controlled current source, and the voltage-controlled current source is used as the electronic load. Thus, the programmable electronic load can flexibly simulate the loads in different resistance values according to the setting; and when the programmable electronic load is applied to the practical teaching of an analog electronic technique curriculum, series of high power resistors in different resistance values are not required as loads, so that the practical teaching cost is saved, and the workload of a practical training guiding teacher is relieved.

The invention relates to a low-voltage high-power driving circuit for servo motor control. The low-voltage high-power driving circuit comprises a signal isolation circuit, a gate driving circuit and an MOSFET circuit; PWM signals are connected into the input end of the signal isolation circuit; the output end of the signal isolation circuit is connected with the input end of the gate driving circuit; the output end of the gate driving circuit is connected with the input end of the MOSFET circuit; the output end of the MOSFET circuit is connected with a servo motor; and the servo motor can be driven through controlling the MOSFET circuit. According to the low-voltage high-power driving circuit for servo motor control of the invention, an MOSFET is applied to the high power field. With the power driving circuit adopted, the miniaturization, light weight and low power consumption of a servo driver can be realized, so that the requirements of the driver, for a power switching device, can be satisfied.

The invention relates to a sine wave inverter which comprises a uH-grade 10A high-power inductor, a high-power field-effect tube, a power diode, an MCU (Microprogram Control Unit), a uH-grade 2A high-power inductor, a voltage feedback network, a 2uF-220uF/400V aluminum electrolytic capacitor and a photoelectric relay. The sine wave inverter has the converting efficiency of 99 percent and low cost, saves energy and completely replaces the traditional inverter product with low converting efficiency.