Diamond power transistor and preparing method thereof

Abstract

The invention discloses a diamond power transistor and a preparing method thereof. The diamond power transistor comprises a hydrogen terminal diamond, a source electrode, a drain electrode and a gate electrode. The source electrode and the drain electrode of the diamond power transistor adopt an annular structure. The gate electrode is provided with a field plate structure. According to the invention, the annular structure is adopted, the current distribution when the transistor works is effectively improved, and the electric field concentration phenomenon is effectively improved, so that the breakdown voltage of the device can be obviously increased; the gate electrode adopts the field plate structure, the current distribution of the gate electrode is improved, and the breakdown voltage of the device can be further increased; in addition, the diamond power transistor of the structure is high in voltage resistance and can be used in the high-voltage high-power field.

Description

【Technical field】 [0001] The invention belongs to the technical field of semiconductor power devices, and in particular relates to a diamond power transistor and a manufacturing method thereof. 【Background technique】 [0002] At present, semiconductor power transistors are mainly based on Si, GaN, SiC and other materials, but their material characteristics limit the performance of their devices working in the power field. As a semiconductor material with a wide bandgap (5.5eV), diamond has a high breakdown field strength (10MV / cm), high electron and hole mobility (4500cm 2 / (V·s) and 3800cm 2 / (V·s)) and high thermal conductivity (22W / (mm·K)), so that diamond has a wide range of application prospects in the field of high power and high temperature. With the development of microwave plasma chemical vapor deposition technology, there are more and more semiconductor devices made of diamond, and their performance is getting better and better, especially the field effect transi...

AI Technical Summary

Problems solved by technology

However, in the current diamond transistors, due to the insufficient optimization of the electrode structure, the electric field concentration effect is easily formed at the edges of the source and drain square electrodes.

Moreover, for the traditional gate structure, it is easy to form an electric field concentration near the gate, which makes the device prone to breakdown when it works at high voltage.

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