Preparing method of diamond thin-film field-effect photo-electric detector

A technology of diamond thin film and photodetector, which is applied to circuits, electrical components, semiconductor devices, etc., to achieve the effect of reducing manufacturing cost, promoting large-scale application, and improving smoothness

Inactive Publication Date: 2009-09-09
SHANGHAI UNIV
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Problems solved by technology

[0006] In view of the research progress that has not yet broken through the preparation technology of single crystal diamond film and P-type doping technology, we pr

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  • Preparing method of diamond thin-film field-effect photo-electric detector
  • Preparing method of diamond thin-film field-effect photo-electric detector

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Embodiment

[0030] Embodiment: the technical process and steps of the present embodiment are as follows:

[0031] (1) Silicon substrate pretreatment: (100) mirror-polished silicon wafers were used as deposition substrates. Ultrasonic cleaning with HF acid for 10 minutes to remove the silicon oxide layer on the surface. In order to increase the nucleation density of the diamond film, the silicon substrate was mechanically ground for 10 minutes using diamond powder with a particle size of 100 nm. The ground silicon wafer was ultrasonically cleaned in an acetone solution mixed with 100 nm diamond powder for 10 minutes. Finally, the silicon wafer is ultrasonically cleaned with deionized water and acetone, respectively, until the surface of the silicon wafer is clean, dried and put into the reaction chamber of a microwave plasma chemical vapor deposition (MPCVD) device.

[0032] (2) Diamond film nucleation process: first use a vacuum pump to evacuate the reaction chamber to 5Pa, and then use...

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Abstract

The invention relates to a preparing method based on a P-type nanometer diamond thin film/(100) directed diamond thin-film field-effect photo-electric detector, which belongs to the technical field of the production technology of field-effect photo-electric detectors. The invention is characterized in that the Schottky field-effect structure is used, and the P-type nanometer diamond thin film is used as the surface P-type ditch layer. The P type of the nanometer diamond thin film is not obtained by being mixed with other elements but etching the hydrogen ions and other ions to obtain the H-terminal P-type nanometer diamond layer. The invention has another characteristic that the traditional silicon-substrate technology is not used, thereby being beneficial to the application of the detector in high-temperature, high-frequency and high-power fields and bad environments.

Description

technical field [0001] The invention relates to a method for preparing a field-effect photodetector based on a p-type nanometer diamond film / [100] oriented diamond film, and belongs to the technical field of field-effect photodetector manufacturing technology. Background technique [0002] In the 21st century, optoelectronic technology will play an increasingly important role in a highly informationized society. Photon integration and optoelectronic integration technology put forward higher requirements for device power, frequency, and operating temperature. Due to their own structure and characteristics, traditional Si and GaAs semiconductor materials increasingly show their deficiencies and limitations in terms of high temperature, high frequency, high power and radiation resistance. Silicon has a small bandgap, so devices made of silicon cannot work in an environment higher than 150°C, and cannot meet the requirements of harsh environments such as high flux, high radiatio...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 王林军方谦黄健肖琦王俊张弋夏义本
Owner SHANGHAI UNIV
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