MOSFET-based power driving circuit

Abstract

The invention relates to the electromechanical servo system motor driving technical field, and particularly discloses an MOSFET-based power driving circuit. The driving circuit includes an optical coupling isolation circuit, a driving chip, totem pole output circuits and MOSFETs; PWM signals are accessed into the input end of the optical coupling isolation circuit; the output end of the optical coupling isolation circuit is connected with an input end of the driving chip; two output ends of the driving chip are respectively connected with the gates of an MOSFET B and an MOSFET A through two totem pole output circuits in mirror symmetry, wherein the MOSFET B and the MOSFET A are in series connection, and therefore, the MOSFET B and the MOSFET A can be switched on and switched off simultaneously. With the MOSFET-based power driving circuit of the invention adopted, the application of the MOSFETs in a high-power field can be realized, and the monopoly of IGBTs in the field can be broken; and the miniaturization, light weight and low power consumption of servo drives can be realized.

Description

technical field [0001] The invention belongs to the technical field of electromechanical servo system motor drive, and in particular relates to a MOSFET-based power drive circuit. Background technique [0002] With the development of power electronic devices, electromechanical servo technology rises rapidly. Especially in the field of aerospace, the requirements for miniaturization, light weight, fast response and low power consumption of high-power electromechanical servo drives are getting higher and higher. However, the current high-power switching devices are still dominated by IGBTs, and it is difficult to meet the requirements of future drivers for power switching devices. [0003] Compared with IGBT, MOSFET has the advantages of small size, light weight, fast switching speed, and low power consumption. It is especially suitable for aerospace systems that have strict requirements on volume, weight, and power consumption. Super power like IGBT. Contents of the inven...

AI Technical Summary

Problems solved by technology

However, the current high-power switching devices are still dominated by IGBTs, and it is difficult to meet the requirements of future drivers for power switching devices.

[0003] Compared with IGBT, MOSFET has the advantages of small size, light weight, fast switching speed, and low power consumption. It is especially suitable for aerospace systems that have strict requirements on volume, weight, and power consumption. Extra high power like IGBT

Images