28 results about "Mosfet circuits" patented technology

The present invention discloses a design method for an intelligent operation board. A MOSFET circuit is added to the internal circuit of a line protection box. When a circuit breaker fails, the MOSFET circuit can automatically cut off the control power supply of the operation circuit through a CPU control command, without generating arcing, thereby protecting the closing and opening coils of the circuit breaker from being burned. On the intelligent board, control output can be performed according to external information, and the circuit can be controlled according to feedback signals and an internally set opening and closing holding time. The design method of the intelligent operation board of the present invention can record various on-site operations, perform accident analysis, and protect the opening and closing coils of the circuit breaker and the opening and closing relay nodes on the measurement and control equipment, thereby solving the problem of only protecting the relay nodes and sacrificing the opening and closing coils of the circuit breaker.

This application provides a master-slave switching circuit based on USB 2.0 communication, including a communication circuit module and a charging circuit module. The charging circuit module includes a rectifier and filter circuit, a reverse connection protection circuit, a DC-DC circuit, and a Block MOSFET circuit connected in sequence. Power is supplied through a power connector to the rectifier and filter circuit, and then output to the HUB IC by the Block MOSFET circuit. The communication circuit module includes a Type-C interface and a Type-A interface, both integrated into a single communication signal transmitted to the vehicle's infotainment system via the HUB IC. Furthermore, a switching detection circuit and an output VBUS level control circuit are connected between the HUB IC and the vehicle's infotainment system for power management of the master-slave switching circuit. Through precise level detection and control, this application enables intelligent power switching, ensuring safe communication between the vehicle's infotainment system and external devices, enhancing device protection, and improving the user experience. This circuit design not only optimizes power management but also provides higher reliability and security for the vehicle's infotainment system.

The invention belongs to the MOSFET (metal-oxide-semiconductor field effect transistor) driving control technology, particularly relates to a solid-state power controller driving circuit based on a reference source circuit and a control method, and can be applied to the field of power distribution system power control. The solid state power controller driving circuit comprises a main control processor circuit, a reference source circuit, a follower circuit, an MOSFET driving circuit, an MOSFET circuit and an MOSFET parameter acquisition circuit, an output end main control I / O of the main control processor circuit is connected with an input end of the MOSFET driving circuit, and an input end MOSFET state acquisition I / O of the main control processor circuit is connected with an output end of the MOSFET parameter acquisition circuit; the output end of the reference source circuit is connected with the input end of the follower circuit; the output end of the follower circuit is respectively connected with the ground of the MOSFET driving circuit and the input end of the MOSFET parameter acquisition circuit; the input end of the MOSFET parameter acquisition circuit is connected with the output end of the MOSFET circuit; and the output end of the MOSFET driving circuit is connected with the input end of the MOSFET circuit.

The invention discloses a method and a device for constructing a circuit simulation model of a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). The method and the device are used for solving the problems of low accuracy of third quadrant characteristic modeling and poorer model convergence when the SiC MOSFET is modeled at present. The method comprises the following steps: acquiring a model circuit structure of the SiC MOSFET and a third quadrant working data point set; reverse current fitting based on voltage comparison is carried out on the third quadrant working data point set according to a preset model expression, and fitting coefficients of the model expression are obtained; and constructing a circuit simulation model of the SiC MOSFET according to the model circuit structure, the third quadrant working data point set, the model expression and each fitting coefficient.

A cascade MosFet circuit design for variable gear switching using pulse width modulation (PWM) between electronic gears to achieve a smooth transition is disclosed. In an embodiment, in the system, there can be three separate stages of two or more switches from very low amperage to hundreds of amps that can be automatically selected within a chosen stage. The automatic switching can be programmed to be power (e.g., current) sensitive or can be both power and electronic gear sensitive as to cascade into the right MosFet combination for different gear settings and still select greater values for varying power levels. Such a smooth transition can allow the generator or motor using such cascade MosFet circuit design to operate more efficiently and / or more quietly.

The present invention discloses a fully MOSFET low-voltage bandgap reference circuit based on a depletion-type MOS transistor, which includes a PTAT current unit (1), a compensation and matching unit (2), a current mirror unit (3), a current mirror unit (4), and a CTAT voltage unit (5). The PTAT current unit (1) is used to generate a PTAT current proportional to temperature; the compensation and matching unit (2) is used to generate a matching current to eliminate the noise of the PTAT current; the current mirror unit (3) is used to copy the current proportional to temperature generated by the PATA current unit; the current mirror unit (4) is used to copy the matching current generated by the compensation and matching unit (2); the CTAT voltage unit (5) is used to generate a voltage with a negative temperature coefficient. The present invention uses a depletion-type NMOS transistor to generate the PTAT current, which is applicable to high-frequency circuits and does not require gate biasing, and the circuit structure is simple. Moreover, a fully MOSFET circuit structure is adopted, and the process compatibility is good. The present invention is applicable to occasions of low bandgap voltage output and high-frequency circuit design.

The invention discloses a peak-free power supply monitoring circuit design method, which is characterized in that an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) circuit is additionally arranged on the basis of a standard power supply monitoring circuit, and a voltage drop of about 1V is generated by utilizing a threshold voltage Vt of the MOSFET circuit, so that the output voltage of the monitoring circuit is prevented from rising when the monitoring circuit does not work normally, and an FPGA (Field Programmable Gate Array) is in a known state; and a logic chip code execution error caused by an uncertain state in a system power-on process or power failure is prevented.

The present invention relates to the field of power electronics technology, and provides a variable-resistance active gate driver, a driving method and a medium. The variable-resistance active gate driver includes: a control unit, an isolation gate driving module, a gate driving resistance network, a current change rate monitoring module and a target MOSFET circuit; one end of the isolation gate driving module is connected to the control unit, and the other end is connected to the gate driving resistance network; one end of the current change rate monitoring module is connected to the target MOSFET circuit, and the other end is connected to the control unit; the gate driving resistance network is connected to the target MOSFET circuit; the current change rate monitoring module monitors the drain-source current change rate of the target MOSFET circuit and feeds it back to the control unit, and according to the drain-source current change rate, sends a control signal to adjust the resistance value provided by the gate driving resistance network at the gate of the target MOSFET circuit. The present invention reduces the overshoot and oscillation of the source-drain voltage and current of the MOSFET, and improves the flexibility and dynamic adjustment ability of the active gate driving technology.

The utility model discloses a hydrogen fuel cell system controller dual-power supply device controller, which relates to the technical field of power supply control, and comprises a controller main body and an electric power system, the left end and the right end of the controller main body are respectively provided with a fixing rod, and the upper end and the lower end of the controller main body are respectively provided with a mounting frame. A limiting groove is formed in one end of the mounting frame, an electric power system is mounted in the controller body, and the electric power system comprises a V1 line, a V2 line, an MOSFET circuit, an MOSFET switch, a Boost circuit, a Charge circuit and a battery Bat. According to the utility model, through the dual-power supply device and mainly introducing a switching method between the dual power supplies, the heat loss of the circuit can be reduced, the system efficiency can be improved, meanwhile, the auxiliary power supply can be ensured to continuously complement energy when not outputting outwards, and the long-term stability of the system is greatly improved.

The application relates to a super-junction MOSFET device drift region parabolic variable resistance model and a modeling method, which comprises the following steps: constructing a super-junction MOSFET circuit model, wherein the model is composed of a MOSFET, a drift region parabolic variable resistance, a body diode and a first resistance I and a first resistance II; resistance modeling is carried out on the drift region of the super-junction MOSFET device according to the physical structure parameters of the super-junction MOSFET, and a parabolic variable resistance model of the drift region is obtained by adopting a parabolic approximation; a Taylor polynomial is introduced to describe a self-heating first resistance model. The parameters of the drift region parabolic variable resistance model are obtained through the physical structure parameters of the super-junction MOSFET device, the parameters of a conventional MOSFET model, the parameters of a body diode model and the parameters of a self-heating first resistance model are obtained through actual measurement data of the device. The application can well simulate the characteristics of the super-junction MOSFET device in various working regions, and the simulation accuracy is high.

Circuits and methods for high-quality amplifiers (e.g., low-noise amplifiers and power amplifiers) that are sensitive, provide good amplification, are physically compact, and can withstand relatively high drain-to-source voltages. Some embodiments include a thin gate oxide N-type MOSFET device or N-type Extended Drain MOSFET (NEDMOS) device co-fabricated with one or more serially-coupled thick gate oxide P-type Extended Drain MOSFET (PEDMOS) devices of several types. Some embodiments include one or more multi-gate NEDMOS devices. Embodiments includes PEDMOS devices having at least source and drain regions that include germanium (e.g., as a heterogeneous or homogenous SiGe alloy, including Ge-doped Si and graded Ge and Si mixtures), particularly PEDMOS devices having a strained channel region. A significant benefit of the inventive IC structures and variants is the space savings in IC layouts resulting from the use of shared regions between adjacent devices, particularly when concatenating multiple PEDMOS and NEDMOS devices and sharing drain / source regions.

The utility model belongs to the field of LLC direct-current power supplies, and particularly relates to a high-power LLC direct-current power supply device, which comprises a plurality of LLC monomers which are connected in parallel, and each LLC monomer comprises a full-bridge Mosfet circuit, a resonant cavity and a diode rectifier bridge; the resonant transformers in each LLC single resonant cavity are divided into two resonant transformers, and the two resonant transformers are connected by adopting a series structure, so that the design difficulty and the overall size of the device can be reduced, meanwhile, two rectifier bridges are designed in the diode rectifier bridge, and the output sides of the two rectifier bridges are connected by adopting a series structure, so that the design difficulty and the overall size of the device can be reduced. According to the LLC module, the requirement for the voltage withstanding level of a rectifier bridge can be lowered, device type selection is facilitated, different numbers of LLC monomers can be selected for parallel connection according to actual needs, and the overall power level of the device can be improved.

A current sensing circuit includes an output driving transistor having an output node to provide an output voltage; a diode connection type first transistor connected between the output node and the current circuit; a second transistor and a third transistor are connected in series with each other, a gate of the second transistor is connected to a gate of the output driving transistor, and a gate of the third transistor is connected to a gate of the first transistor; and the current measuring circuit is connected in series with the second transistor and the third transistor and is used for measuring the current flowing through the second transistor and the third transistor.

A system and method for autonomous machine identity succession utilize a hardware-rooted semantic sentinel and an analog neuromorphic audit engine to ensure state integrity. The system detects micro-architectural threat signatures through continuous asynchronous voltage monitoring and gates cryptographic signatures via a low-impedance analog interlock circuit physically interposed on a processor signature-enable line. Behavioral integrity is verified through an adversarial “Proof of Logical Alignment” handshake, where proposed action vectors are audited via an analog memristor crossbar array utilizing physical current summation replicated through a high-impedance Wilson Current Mirror isolation barrier. The invention ensures the atomic migration of identities across heterogeneous hardware architectures through a “Handshake-and-Zeroize” protocol, utilizing a series-pass isolation switch and crowbar MOSFET circuit to provide irreversible thermodynamic destruction of the source state.

The invention relates to a SiC MOSFET-based solid-state power controller and a control method thereof, and belongs to the field of high-voltage direct-current intelligent power distribution. The SiC MOSFET-based solid-state power controller comprises a control circuit for outputting a control signal and a power circuit; the control circuit comprises an isolation driving unit and a power supply isolation and control conversion unit; the power circuit comprises a pre-charging circuit and a double-switch Boost circuit; the double-switch Boost circuit comprises a first SiC MOSFET circuit and a second SiC MOSFET circuit; and under the action of the control signal, the pre-charging circuit supplies power to a load when the power circuit is started, and after the power circuit is started, the second SiC MOSFET circuit is independently conducted or alternately conducted with the first SiC MOSFET circuit, and is used for supplying power to the load connected between the positive output end and the negative output end of the double-switch Boost circuit. The solid-state power controller is efficient, stable and reliable.

A circuit added to a smoke detector which uses a sensing device to detect interference to smoke detectors. The circuit can be MOSFET circuit or a normally open relay circuit. The sensing devices to determine whether interference has occurred to the smoke detector, for example covering or interfering with the outer housing of the smoke detector can include a fan, a distance sensing device, a LiDAR device or other devices.

The utility model discloses a low-ripple heavy-current buck-boost device, which relates to the technical field of power supply management and comprises a shell, a buck-boost circuit is arranged in the shell and comprises a switching power supply chip, the switching power supply chip is respectively connected with a high-voltage side buck MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) circuit and a low-voltage side boost MOSFET circuit, and the high-voltage side buck MOSFET circuit is connected with the low-voltage side boost MOSFET circuit. The buck-boost circuit is connected with the power supply input end through the overvoltage protection circuit; the high-voltage side step-down MOSFET circuit and the low-voltage side step-down MOSFET circuit are adopted to automatically replace a step-up mode and a step-down mode, output ripples are reduced, and by arranging the overvoltage protection circuit, the situation that the circuit is damaged due to the fact that too large input voltage is connected is prevented.

The present invention discloses a normal start-up large current abnormal detection and control system for an automobile power supply, and relates to the technical field of automobile starting power supplies. In the present invention: a power management unit is electrically connected to a main battery of a starting power supply through a switch circuit; a drive control module drives and controls the on and off of the switch circuit; a Mosfet circuit is serially connected to the negative output line of the main battery of the starting power supply, and the drive control module drives and controls the on and off of the Mosfet circuit; an independent low-voltage circuit is electrically connected to the starting module, and the starting module transmits a starting signal to a main processing controller; the main processing controller compares the output voltage and current information of the starting power supply with a reference value, and according to the comparison information of the voltage and current, the main processing controller sends a corresponding drive control signal to the PCB inside the starting power supply. In the process of quality inspection of the starting power supply, the present invention reduces the degree of damage to the PCB caused by abnormal start-up, and also reduces the additional design of the power supply circuit.

The invention relates to the technical field of power electronic protection, and discloses a protection circuit applied to an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), which comprises an overvoltage protection unit and an overcurrent protection unit, the overvoltage protection unit comprises an overvoltage monitoring circuit and a triode overvoltage adjusting circuit; the over-current protection unit comprises an over-current detection circuit and a triode over-current regulation circuit; the adjusting action end of the triode overvoltage adjusting circuit and the adjusting action end of the triode overcurrent adjusting circuit are connected between the grid electrode and the source electrode of the MOSFET to be protected in parallel. According to the scheme, through a parallel double-closed-loop adjusting framework, a synergistic path of an overvoltage protection unit and an overcurrent protection unit is constructed between a gate electrode and a source electrode of an MOSFET, and the overvoltage protection unit adopts a transient suppression diode to be connected with an RC network in parallel to achieve rapid voltage spike response; the overcurrent protection unit and the charge pump form a self-adaptive power supply system through a conversion circuit; a threshold coupling mechanism is innovatively introduced, so that an overvoltage protection threshold is dynamically adjusted along with load current. The invention also provides an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) circuit and a chip.

The present application relates to a multiphase AC power supply control circuit and a solid-state relay. The circuit includes at least one MOSFET circuit and at least one gate drive power supply circuit correspondingly connected to the MOSFET circuit. The MOSFET circuit is connected in series in any one-phase AC power supply path. It further includes an input control circuit, a MOSFET drive circuit, and a zero-crossing detection circuit. The zero-crossing detection circuit is connected to the multiphase AC power supply path. The zero-crossing detection circuit outputs a zero-crossing signal when the multiphase alternating current output by the multiphase AC power supply path passes through zero. The MOSFET drive circuit, under the trigger of the zero-crossing signal and based on the enable signal sent by the input control circuit, controls the gate drive power supply circuit to provide a drive power signal to the corresponding MOSFET circuit. The MOSFET circuit controls the corresponding AC power supply path to conduct based on the drive power signal, solving the problem that the impact current during the on / off process of the circuit is too large and is not conducive to the long-term use of the MOSFET.

A current sensing circuit includes an output driving transistor with an output node that provides an output voltage; a diode-connected first transistor connected between the output node and a current circuit; a second transistor and a third transistor connected in series, the second transistor having a gate connected to a gate of the output driving transistor, and the third transistor having a gate connected to a gate of the first transistor; and a current measuring circuit connected in series with the second transistor and the third transistor to measure a current flowing through the second transistor and the third transistor.

The utility model discloses a continuous work low power consumption current limiting system, including PTC, MOSFET, control circuit and current limiting resistor, the PTC and MOSFET are connected in series and then are connected in parallel with current limiting resistor, the MOSFET is also connected with the control circuit. According to the utility model, two impact current suppression settings based on the PTC and the MOSFET are combined, the two impact current suppression settings complement each other, and the current limiting of the airborne equipment in the whole process from power-on to power-off is realized. And the problem of high power consumption of a passive impulse current suppression circuit is solved by utilizing the advantage of low power consumption of the MOSFET impulse current suppression circuit during the steady-state working period. Meanwhile, the MOSFET circuit and the PTC resistor which are designed and adopted are small in size, so that the circuit is more practical for miniaturized airborne electronic equipment.

A current sensing circuit includes an output driving transistor with an output node that provides an output voltage; a diode-connected first transistor connected between the output node and a current circuit; a second transistor and a third transistor connected in series, the second transistor having a gate connected to a gate of the output driving transistor, and the third transistor having a gate connected to a gate of the first transistor; and a current measuring circuit connected in series with the second transistor and the third transistor to measure a current flowing through the second transistor and the third transistor.

The invention relates to a power circuit based on a SiC MOSFET, and belongs to the field of high-voltage direct-current intelligent power distribution. Comprising a power supply unit, a first energy storage unit, a second energy storage unit, a first SiC MOSFET circuit and a second SiC MOSFET circuit. The first energy storage unit is connected between the positive electrode of the power supply unit and the positive ends of the first SiC MOSFET circuit and the second SiC MOSFET circuit; the negative end of the first SiC MOSFET circuit is connected with the negative output end of the double-switch Boost circuit, and the negative end of the second SiC MOSFET circuit is connected with the positive output end of the double-switch Boost circuit; the second energy storage unit is connected between the positive output end and the negative output end of the double-switch Boost circuit; and under the action of a control signal, the second SiC MOSFET circuit is independently conducted or is alternately conducted with the first SiC MOSFET circuit. The power circuit with high power distribution efficiency and high adaptability is realized.

Circuits and devices for a motor driver are described. A hybrid integrated circuit (IC) can include a driver IC, a first IC, and a plurality of second ICs. The first IC can include a plurality of high-side metal-oxide-semiconductor field-effect transistors (MOSFETs). The first IC can further include a common drain terminal connected to drains of the plurality of high-side MOSFETs. Each one of the plurality of second ICs can include a respective low-side MOSFET. The hybrid IC can further include a first set of bonding wires connecting the driver IC to the first IC. The hybrid IC can further include a second set of bonding wires connecting the driver IC to the plurality of second ICs. The hybrid IC can further include a third set of bonding wires connecting the first IC to the plurality of second ICs.

A vehicle fuel pump power management circuit that replaces traditional relay and fuse-based power routing with a MOSFET-based circuit controlled by the Automatic Shutdown Relay (ASD) and Engine Control Unit (ECU). The MOSFET circuit allows direct current flow from the vehicle's power supply to the fuel pump, enhancing reliability by reducing mechanical failures associated with conventional relays. A multi-layered PCB design minimizes electromagnetic interference, enhances heat dissipation, and prevents component overheating, while isolating circuits for optimized performance. The ECU provides real-time adjustments based on sensor feedback, ensuring efficient fuel injection timing.

The utility model relates to the technical field of digital image processing, and particularly discloses an image processing digital board card based on a DSP (Digital Signal Processor) and an FPGA (Field Programmable Gate Array), which comprises a bottom plate, a rectangular connector arranged on the bottom plate, an FPGA chip, a DSP chip, an audio acquisition and playback unit, an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) circuit unit, a conversion unit, a network transmission unit and a control unit, the rectangular connector is respectively connected with the audio acquisition and playback unit, the MOSFET circuit unit, the conversion unit, the network transmission unit and the control unit; the FPGA chip is respectively connected with the audio acquisition and playback unit, the MOSFET circuit unit, the conversion unit, the network transmission unit and the control unit; the FPGA chip is connected with the DSP chip through a GPIO interface and a configuration IO interface. An audio acquisition and playback unit, an MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) circuit unit, a conversion unit, a network transmission unit and a control unit are integrated on an image digital board card, so that the board card has the capabilities of audio acquisition, playback, network transmission, 1553B interface and serial port communication.

The invention discloses a silicon carbide drive circuit and a control method thereof, relates to the technical field of power electronics, and solves the problems of failure of a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device and reduction of circuit reliability caused by high rising speed of interference current and too slow action of a protection circuit in the silicon carbide drive circuit. The circuit comprises an upper tube driving circuit and a lower tube driving circuit, the upper tube driving circuit comprises an upper tube conduction driving circuit and an upper tube turn-off driving circuit with a first bypass semiconductor switch, and the lower tube driving circuit comprises a lower tube conduction driving circuit and a lower tube turn-off driving circuit with a second bypass semiconductor switch. An upper tube driving control signal is input to the second bypass semiconductor switch after being isolated by the second isolation circuit, and a lower tube driving control signal is input to the first bypass semiconductor switch after being isolated by the first isolation circuit, so that the anti-interference capability of the silicon carbide driving circuit is improved, and the application range of the high-frequency and high-power carbonizer is expanded; and the reliability of the silicon carbide MOSFET circuit is improved.