RC-stacked MOSFET circuit for high voltage (HV) electrostatic discharge (ESD) protection

A voltage and control circuit technology, applied in the field of integrated circuit devices, can solve problems such as inability to reach ESD devices

Active Publication Date: 2016-06-08
GLOBALFOUNDRIES SINGAPORE PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, although a stacked configuration of N FETs has the potential to make the total holding voltage N times the holding voltage of each cell, it also provides a much higher trigger voltage (typically higher than BVDSS), which cannot be triggered before the device collapses. Trigger protection features first, defeating the main purpose of an ESD device

Method used

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  • RC-stacked MOSFET circuit for high voltage (HV) electrostatic discharge (ESD) protection
  • RC-stacked MOSFET circuit for high voltage (HV) electrostatic discharge (ESD) protection
  • RC-stacked MOSFET circuit for high voltage (HV) electrostatic discharge (ESD) protection

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Embodiment Construction

[0026] The invention is set forth in the claims which are believed to be characteristic of the novel features. However, the invention itself and its preferred mode of use, objects and advantages thereof will be best understood by reference to the following detailed description of illustrative specific embodiments when read with the accompanying drawings. The functions of the various circuits, devices, or components described herein may be implemented as hardware (including discrete components, integrated circuits, and system-on-chips (SoCs)), firmware (including application-specific integrated circuits and programmable chips), and / or software or The combination depends on the application requirements.

[0027] Similarly, the functions used to form the mechanical elements, components and / or assemblies for assembling modules, subassemblies and assemblies according to the device structure can be performed using various materials and coupling techniques, depending on the applicati...

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Abstract

The invention relates to a RC-stacked MOSFET circuit for high voltage (HV) electrostatic discharge (ESD) protection. Devices and methods of forming an integrated circuit (IC) that offer protection against ESD in high voltage (HV) circuit applications are disclosed. A device includes N ones of a field effect transistor (FET) stacked in series to provide an N-level stack, where N is an integer greater than 1. A first pad of the device is coupled to a first FET and a second pad is coupled to an Nth FET. The device also includes a stacked / distributed RC control circuit configured to cause a short circuit between the first pad and the second pad in response to an ESD event. During the ESD event, the RC control circuit is configured to concurrently provide sufficient voltage to control the N ones of the FET by turning them on using parasitic conduction to cause the short circuit.

Description

technical field [0001] The present invention relates to apparatus and methods for providing integrated circuit (IC) protection against ESD in high voltage (HV) circuit applications. [0002] Related Application Cross Reference [0003] This application claims the benefit of and priority to US Patent Application Serial No. 62 / 085,630, filed November 30, 2014, which is incorporated herein by reference in its entirety. Background technique [0004] High-voltage (HV) integrated circuits used in power management, power conversion, LCD / display, automotive, and other applications typically operate between 12V and 100V. Stacked field-effect transistor (FET)-based cell structures are usually used to design HV circuits. The occurrence of electrostatic discharge (ESD) can severely and irreparably damage unprotected electronic circuits, including HV integrated circuits. For this reason, many HV IC chips may include built-in ESD devices to provide some protection against undesirable f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L21/77
CPCH01L21/77H01L27/0288H01L21/76224H01L27/0274H01L27/0629H02H9/04H01L29/1095
Inventor H·利内威赫李明S·玛里繆特胡余荣华
Owner GLOBALFOUNDRIES SINGAPORE PTE LTD
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