Gas guide and support integrated low-pressure chemical vapor deposition cavity
A low-pressure chemical gas phase, integrated technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of uneven film thickness, uneven diffusion of reaction gas, etc., to improve contact uniformity , the effect of simplifying the internal structure
Inactive Publication Date: 2017-02-15
WUXI HI NANO TECH
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- Application Information
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Problems solved by technology
The structural design of the existing low-pressure chemical precipitation chamber is unreasonable, and the reaction gas cannot be uniformly diffused to the wafer surface, resulting in uneven thickness of the formed film
Method used
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Embodiment Construction
[0010] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
[0011] Such as figure 1 As shown, the low-pressure chemical vapor deposition chamber with integrated gas guide and support in this embodiment includes a chamber 1, and a gas guide structure and a support structure for supporting a wafer are built in the chamber 1, and the gas guide structure and the support structure are integrated. structure, including a gas guide support tube 2 vertically placed in the cavity 1, a plurality of air guide holes are arranged at intervals on the tube wall of the air guide support tube 2, and a rotary sleeve 3 is sleeved on the air guide hole, and the rotary sleeve 3 A horizontal air guide tube 4 is installed, and air outlet holes 5 are evenly distributed on the tube wall of the air guide tube 4, and a chuck 7 for clamping a wafer 6 is installed on the air guide support tube 2 between the upper and lower adjace...
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The invention relates to a gas guide and support integrated low-pressure chemical vapor deposition cavity which comprises a cavity body. A gas guide structure and a support structure used for supporting wafers are arranged in the cavity body. The gas guide structure and the support structure are of an integrated structure. A gas guide and support pipe vertically arranged in the cavity body is included. A plurality of gas guide holes are formed in the pipe wall of the gas guide and support pipe at intervals. A rotary sleeve is sleeved with each gas guide hole. A transverse gas guide pipe is mounted on each rotary sleeve. Gas outlet holes are evenly distributed in the pipe wall of each gas guide pipe. A chuck for clamping the corresponding wafer is mounted at the position, between every two vertically-adjacent rotary sleeves, of the gas guide and support pipe. In the gas guide and support integrated low-pressure chemical vapor deposition cavity, the gas guide structure and the support structure used for supporting the wafers are combined, so that the inner structure of the cavity body is simplified, and the gas guide pipes are arranged reasonably, so that the contact uniformity of reaction gas and the wafers is greatly improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a chemical vapor deposition chamber for wafers. Background technique [0002] Low-pressure chemical vapor deposition refers to pumping the deposition chamber into a low-pressure state, putting the reaction gas into the deposition chamber, the reaction gas diffuses to the wafer surface in the deposition chamber, and reacts in the reaction zone near the wafer surface to form a thin film. The structural design of the existing low-pressure chemical deposition chamber is unreasonable, and the reaction gas cannot be uniformly diffused to the surface of the wafer, resulting in uneven thickness of the formed film. Contents of the invention [0003] In view of the above-mentioned problems existing in the prior art, the applicant conducted research and improvement to provide an integrated low-pressure chemical vapor deposition chamber with gas guide and support, which can improve ...
Claims
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IPC IPC(8): C23C16/455C23C16/458
CPCC23C16/45559C23C16/4581C23C16/4583
Inventor 吕耀安
Owner WUXI HI NANO TECH