Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for managing Nandflash memory data

A memory data and data technology, applied in the field of Nandflash memory partition management, can solve problems such as failure, data loss storage, memory block damage, etc., to achieve the effect of convenient management and use, clear data partition, and reduce management difficulty

Inactive Publication Date: 2017-02-15
易充新能源(深圳)有限公司
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the defects of the prior art, the purpose of the present invention is to provide a method of Nandflash memory data management, aiming to solve the problem of data loss or storage failure caused by memory block damage when reading and writing data in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for managing Nandflash memory data
  • Method for managing Nandflash memory data
  • Method for managing Nandflash memory data

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0029] The invention provides a novel method for managing data in memory based on Nandflash. The invention includes Nandflash memory partitioning, data memory block initialization, data management parameter initialization, partition memory data writing, partition memory data reading, and partition data management parameter update; Valid data enables fast and correct writes and reads.

[0030] Such as figure 1 As shown, classify according to the type of data that actually needs to be stored, allocate the data with the maximum capacity in a single memory block according to the data capacity requir...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for managing Nandflash memory data. The method comprises the following steps: S1, partitioning a memory block, and initializing a data memory block; S2, initializing data parameters; S3, performing a write operation on data; S4, updating the data parameters; and S5, performing a reading operation on the data. Nandflash is used for storing data, has high adaptability to large-capacity storage space generally required by existing equipment, and is acceptable for people on the aspect of cost. The method for managing the Nandflash memory data has high convenience and practicability in management data applications. Specific to the defects that bad blocks tend to appear and memory blocks are erased frequently during a cross-block operation and the storage of important data is influenced due to storage of an Nandflash memory in blocks, effective data partition management is performed in conjunction with actual content and size of stored data; a unified operation interface is defined; and codes are convenient to transport.

Description

technical field [0001] The invention belongs to the technical field of Nandflash memory partition management, and more specifically relates to a method for managing Nandflash memory data. Background technique [0002] Nandflash has a fast writing speed, a small chip area, and especially a large capacity, which makes it an obvious advantage. A page is the basic storage unit in Nandflash. A page is generally 512 B (there is also a large page Nandflash with 2 kB per page), and multiple pages form a block. The number of pages in a block in different memories is not the same, usually 16 pages or 32 pages are more common. The block capacity calculation formula is relatively simple, which is the product of the page capacity and the number of pages in the block. According to the capacity of FLASH Memory, the size of blocks and pages in different memories may be different, and the number of pages in a block may also be different. Nandflash memory consists of multiple blocks arrang...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/06
CPCG06F12/0653
Inventor 钟团娟彭文科
Owner 易充新能源(深圳)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com