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Embedded flash memory structure and manufacturing method thereof

A manufacturing method and embedded technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve the problems of lowering, erasing gate and floating gate coupling ratio, etc., to improve performance, improve smile effect, reduce Effect of Coupling Ratio

Active Publication Date: 2017-02-22
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology

In the prior art, a layer of denser silicon dioxide is deposited between the floating gate and the erase gate. , this method improves the erasing efficiency of the embedded flash memory structure to a certain extent, but the coupling ratio between the erasing gate and the floating gate fabricated in this way is difficult to continue to decrease

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  • Embedded flash memory structure and manufacturing method thereof
  • Embedded flash memory structure and manufacturing method thereof
  • Embedded flash memory structure and manufacturing method thereof

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Embodiment Construction

[0042] During the research process, the inventor found that in the prior art, silicon dioxide is used for isolation between EG and FG, but in the case of limited thickness of silicon dioxide, there is no way to further reduce the coupling ratio between EG and FG ; At the same time, during the corresponding thermal oxidation process, oxygen will pass through the silicon dioxide and react with polysilicon to form a thicker oxide layer, aggravating the "smile effect" of the device, thereby affecting the performance of the device. Therefore, the inventor considers improving the isolation between EG and FG by optimizing the process, thereby improving the embedded flash memory structure, so as to further reduce the coupling ratio of EG and FG, improve the erasing efficiency of the device, and reduce the "smile effect" of the device , to improve device performance.

[0043] Based on the above research and discovery, the inventor provides a method for making an embedded flash memory s...

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Abstract

The invention discloses an embedded flash memory structure and a manufacturing method thereof. The manufacturing method comprises the steps of: providing a substrate, and forming a floating gate structure on the substrate; etching the floating gate structure, and forming a groove in the floating gate structure; depositing a barrier layer covering the side wall and bottom of the groove; forming a first dielectric layer on the barrier layer at the bottom of the groove; removing the barrier layer, and reserving the barrier layer below the first dielectric layer; and forming an erasable gate structure on the reserved barrier layer. The embedded flash memory structure formed by the method can reduce the coupling ratio of the erasable gate to the floating gate, and the erasing efficiency of the embedded flash memory structure can be improved; besides, the 'smile effect' in a device can also be improved, and the performance of the device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an embedded flash memory structure and a manufacturing method thereof. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. Today, flash memory has occupied most of the market share of non-volatile semiconductor memory, becoming the fastest growing non-volatile semiconductor memory. [0003] It is well known that the coupling ratio between the erase gate (EG) and the floating gate (FG) of the embedded flash memory structure directly affects the erasing efficiency of the ...

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Application Information

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IPC IPC(8): H01L21/28H01L21/336H01L29/423H01L29/788
Inventor 罗清威周俊
Owner WUHAN XINXIN SEMICON MFG CO LTD
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