Back technique for semiconductor ultrathin device

A backside technology, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., to achieve the effect of high technology maturity and good market application prospects

Active Publication Date: 2017-02-22
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, there are few related reports on the crack control technology in the process of ul

Method used

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  • Back technique for semiconductor ultrathin device
  • Back technique for semiconductor ultrathin device
  • Back technique for semiconductor ultrathin device

Examples

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Example Embodiment

[0028] A backside process method for semiconductor ultra-thin devices, including the following steps:

[0029] 1) Wafer bonding: The semiconductor wafer 1 coated with a high-temperature bonding agent 2 on the front side is bonded to the first carrier 4 coated with a low-temperature bonding agent 3, and the structure after bonding is as follows figure 1 Shown

[0030] 2) Backside process: The wafer in step 1) is thinned into ultra-thin sheets, and then conventional backside processes such as through-holes on the backside and backside metallization are completed in sequence. After the conventional backside process, the structure is as follows figure 2 Shown

[0031] 3) Wafer separation: After step 2) is completed, the low-temperature bonding agent 3 is softened by the thermal separation method to realize the separation of the super thin film and the first carrier 4. The structure of the super thin wafer after separation is as follows image 3 Shown

[0032] 4) Super thin sheet secondary...

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Abstract

The invention discloses a back technique for a semiconductor ultrathin device. The technique comprises the main steps of (1) bonding a wafer of which the surface is coated with a high-temperature bonding agent and a first carrier coated with a low-temperature bonding agent; (2) thinning the wafer into an ultrathin wafer and then sequentially completing conventional back processes of a back through hole, back metallization and the like; (3) separating the ultrathin wafer from the first carrier; (4) attaching the ultrathin wafer to a second carrier and then cleaning and removing the high-temperature bonding agent and the low-temperature bonding agent; (5) separating the ultrathin wafer from the second carrier; (6) carrying out an electric performance test on the ultrathin wafer on a third carrier; and (7) attaching the ultrathin wafer to the second carrier and carrying out wafer cutting. The technique has the advantages that (1) the ultrathin wafer is supported by the carriers in the back process, reduction of the split ratio of the ultrathin wafer in the back process is facilitated and the yield of the process is improved; and (2) the used carriers all are regular-size carriers of a semiconductor, the process is suitable for massive production of the device and the technique maturity is high. The technique has a good market application prospect.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a back processing method for a semiconductor ultra-thin device, and the method is suitable for processing the back of an ultra-thin sheet in the manufacturing process of an ultra-thin power device. Background technique [0002] In the manufacturing process of semiconductor devices, in order to obtain better mechanical properties, electrical properties, and the needs of subsequent processing technology, it is generally necessary to reduce the thickness of the product sheet, which is generally reduced to less than 200 microns, which is called a thin sheet. For some special semiconductor devices, especially some power semiconductor devices, in order to obtain thinner chips, or to meet the requirements of better electrical performance, it is necessary to reduce the thickness of the product sheet to less than 100 microns, or even less than 50 microns, that is, It is ...

Claims

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Application Information

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IPC IPC(8): H01L21/683
CPCH01L21/6835H01L2221/68327H01L2221/6834
Inventor 邹鹏辉王彦硕高建峰黄念宁李信赵玲陈元坤
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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