Memory management method, memory control circuit unit and memory storage device

Abstract

The invention provides a memory management method for a rewritable non-volatile memory, a memory control circuit unit and a memory storage device. The method comprises the steps of selecting at least one first physical erasing unit from at least part of the physical erasing units according to a first parameter; selecting at least one second physical erasing unit from at least one first physical erasing unit according to a second parameter, wherein the second parameter is different from the first parameter; and copying at least part of data stored in the second physical erasing unit to a third physical erasing unit. According to the method, the unit and the device, the wear of the physical erasing units can be effectively averaged, thereby prolonging the service life of the memory storage device.

Description

technical field [0001] The invention relates to a memory management method, in particular to a memory management method for a rewritable non-volatile memory module, a memory control circuit unit and a memory storage device. Background technique [0002] Digital cameras, mobile phones, and MP3 players have grown rapidly in recent years, making consumers' demand for storage media also increase rapidly. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., in recent years, rewritable non-volatile memory The memory industry has become a very popular part of the electronics industry. For example, a solid-state drive using flash memory as a storage medium has been widely used as a hard disk of a computer host to improve the access performance of the computer. [0003] Generally speaking, a memory storage device including a rewritable...

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Problems solved by technology

In other words, the physical erasing unit storing the valid data is likely to be associated with the spare area again when the data is updated, and cause the physical erasing unit storing the valid data to be erased

Therefore, when the leveling operation needs to be performed next time, the physical erasing unit that has been associated to the idle area has a higher chance of being exchanged to the data area again because of its erasing times higher than other physical erasing units. The physical erasing unit is much higher, resulting in the continuous increase of the erasing times of some physical erasing units in the rewritable non-volatile memory, resulting in the use of the physical erasing unit of the rewritable non-volatile memory uneven

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