Check patentability & draft patents in minutes with Patsnap Eureka AI!

Deep trench isolation and method of forming the same

A trench isolation and trench technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as crosstalk

Active Publication Date: 2019-08-30
TAIWAN SEMICON MFG CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, crosstalk occurs due to interference of light undesirably received from adjacent pixels

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deep trench isolation and method of forming the same
  • Deep trench isolation and method of forming the same
  • Deep trench isolation and method of forming the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include forming between the first component and the second component. An embodiment of an additional component such that the first component and the second component may not be in direct contact. Furthermore, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of brevity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method comprising anisotropically etching a semiconductor substrate to form trenches. The trench has vertical sidewalls and a rounded bottom connected to the vertical sidewalls. A damage removal step is performed to remove a surface layer of the semiconductor substrate, the surface layer being exposed to the trench. The rounded bottom of the trench is etched to form a sloped straight bottom. The trench is filled to form a trench isolation region in the trench. Embodiments of the present invention relate to deep trench isolation and a method for forming the same.

Description

technical field [0001] Embodiments of the present invention relate to deep trench isolation and a method for forming the same. Background technique [0002] Image sensor chips including front side illuminated (FSI) image sensor chips and back side illuminated (BSI) image sensor chips are widely used in applications such as cameras. In image sensor formation, image sensors (such as photodiodes) and logic circuits are formed on the silicon substrate of a wafer, followed by interconnect structures on the front side of the wafer. In an FSI image sensor chip, color filters and microlenses are formed above interconnect structures. In the formation of the BSI image sensor chip, after the formation of the interconnection structure, the wafers are thinned, and backside structures such as color filters and microlenses are formed on the backside of the respective wafers. When using an image sensor chip, light is projected onto the image sensor where it is converted into an electrical...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/76H01L27/04
CPCH01L21/76H01L27/04H01L27/14687H01L27/1463H01L29/0653H01L21/76229
Inventor 周正贤曾晓晖赖志育周世培江彦廷蔡敏瑛
Owner TAIWAN SEMICON MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com