Semiconductor device including misfet

Abstract

A semiconductor device includes a semiconductor substrate, a gate insulating film, a gate electrode, a source/drain layer, and a germanide layer. The gate insulating film is formed on the semiconductor substrate. The gate electrode is formed on the gate insulating film. The source/drain layer is formed on both sides of the gate electrode, contains silicon germanium, and has a germanium layer in a surface layer portion. The germanide layer is formed on the germanium layer of the source/drain layer.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2006-034916, filed Feb. 13, 2006, the entire contents of which are incorporated herein by reference. BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to a semiconductor device, and more particularly to an MISFET (Metal Insulator Semiconductor Field Effect Transistor) [0003] 2. Description of the Related Art [0004] In recent years, with miniaturization of semiconductor devices, an increase in speed of an MISFET has attracted attention. For example, in a CMOSFET (Complementally MOS Field Effect Transistor), a carrier (hole) mobility in a channel region of a p-channel MOSFET (which will be referred to as a pMOS hereinafter) is slower than a carrier (electron) mobility in a channel region of an n-channel MOSFET (which will be referred to as an nMOS hereinafter), and hence increasing a speed o...

AI Technical Summary

Problems solved by technology

In this conventional technology, however, when forming the silicide film on the source/drain layer, since the silicon germanium and the silicide film have poor affinity, an increase in a junction leakage current or a contact failure may possibly occur.

However, since this compound is thermally unstable, aggre

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