A Thin Film Transistor with High Effective Power

Abstract

The invention discloses a thin film transistor with high effective power, comprising a substrate, a gate electrode arranged on the substrate, a gate insulating layer which is arranged on the substrate and covers a gate electrode, a semiconductor layer on the surface of the gate insulating layer, and a source electrode and a drain electrode which are arranged on the semiconductor layer, wherein the source electrode is arranged opposite to the drain electrode, the upper surface of the semiconductor layer forms a plurality of first grooves at the projection part of the source electrode and the drain electrode, an ohmic contact layer is formed at the projection part of the source electrode and the drain electrode on the upper surface of the semiconductor layer, the shape of the ohmic contact layer changes with the shape of the upper surface of the semiconductor layer, the source electrode and the drain electrode are formed on the ohmic contact layer, the upper surface of the gate electrode forms a second groove in a corresponding projection area when the first groove forms projection at the gate electrode, and the shape and dimension of the second groove is the same as the corresponding first groove. According to the thin film transistor with high effective power disclosed by the invention, the power consumption caused by the contact between semiconductors and the source and drain metal can be further reduced, and the effective power of the thin film transistor can be increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a thin film transistor. Background technique [0002] Thin-film transistors are widely used as switching devices for each pixel of a display device such as an LCD. Generally speaking, a thin-film transistor has at least a gate, a source, a drain, and a semiconductor layer. The semiconductor layer can be changed by controlling the voltage of the gate. The conductivity of the layer, so that the state of conduction (open) or insulation (closed) is formed between the source and the drain. [0003] The current-voltage properties of thin film transistors commonly used in display devices are affected by factors such as the characteristics of the semiconductor layer and the gate insulating layer in the thin film transistor, the interface properties between the gate insulating layer and the semiconductor layer, field-effect electron mobility, and the characteristics of the thin fil...

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Problems solved by technology

[0004] In order to form a good contact between the semiconductor layer and the source-drain, an ohmic contact layer with N-type doping or P-type doping is usually formed on the semiconductor layer, which reduces the contact between the semiconductor layer and the source to a certain extent. electrode, or the contact resistance between the semiconductor layer and the drain, even so, the power consumption caused by the metal-semiconductor contact is still relatively large, and the improvement of power consumption still needs to be improved

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