Semiconductor structure and fabricating method thereof

Abstract

A semiconductor structure and a method of fabricating the semiconductor structure are disclosed herein. The semiconductor structure includes a substrate, a strain-inducing layer and an epitaxy structure. The strain-inducing layer is disposed on the substrate, and the epitaxy structure is embedded in the strain-inducing layer and not in contact with the substrate.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor structures and manufacturing methods thereof. Background technique [0002] The need to increase the density of integrated circuits formed in semiconductor devices has largely driven the manufacture of integrated circuits (ICs). This is usually achieved by enforcing more aggressive design rules to allow higher density IC device formation. Nonetheless, the increased density of IC devices such as transistors has also increased the complexity of handling semiconductor devices with reduced feature sizes. [0003] For example, as semiconductor devices, such as metal-oxide-semiconductor field-effect transistors (MOSFETs), scale through various technology nodes, epitaxial (epi) semiconductor materials have been used to implement strained source / drain features (e.g., stressor regions) In order to improve the mobility of carriers and improve the performance of devices. Forming MOSFETs with stressor...

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Problems solved by technology

Nonetheless, the increased density of IC devices such as transistors has also increased the complexity of handling semiconductor devices with reduced feature sizes

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