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Solid state device and relevant data writing method thereof

A solid-state storage and data technology, used in static memory, information storage, read-only memory, etc., to solve problems such as inability to program programs and data loss

Active Publication Date: 2017-04-19
SOLID STATE STORAGE TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0019] However, according to the specifications in the specification, it is not possible to program the same three-level storage unit for three consecutive times when programming the flash memory of the three-level storage unit.
Therefore, it may cause the risk of data loss during the flash storage of the three-level memory unit during the programming operation

Method used

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  • Solid state device and relevant data writing method thereof
  • Solid state device and relevant data writing method thereof
  • Solid state device and relevant data writing method thereof

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Embodiment Construction

[0031] Please refer to image 3 , which is a schematic diagram of programming of a triple-level memory cell flash memory (hereinafter referred to as TLC flash memory). image 3 It is a schematic flow chart of programming TLC flash memory to "100" storage state. When programming the program for the first time, first change the TLC flash memory to "111" storage state. Then, when programming the program for the second time, change to "101" storage state. Finally, when programming the program for the third time, change to "100" storage status.

[0032] From the above description, it can be seen that when programming the TLC flash memory, it is necessary to know the final storage state of the TLC flash memory before deciding how to program the TLC flash memory. For example, if image 3 As shown by the dotted line in , if you want to program the TLC flash memory to the “011” storage state, you need to first program to the “000” storage state, then to the “010” storage state, and...

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Abstract

The invention discloses a data writing method for a solid state device. The method comprises the following steps: (a) judging whether a host transmits a shut-down command or not; (b) if the host does not transmit the shut-down command, performing a plurality of program procedures, and storing a plurality of written data in a buffer element into a TLC (Triple-Level Cell) flash memory according to a program order; and (c) if the host transmits the shut-down command, generating a plurality of redundant data to serve as written data to be stored in the buffer element, performing the plurality of program procedures, and storing the written data in the buffer element into the TLC flash memory according to the program order.

Description

technical field [0001] The present invention relates to a solid-state storage device and a control method thereof, and in particular to a solid-state storage device composed of triple-level cell flash memory and a method for writing related data. Background technique [0002] As we all know, a solid state storage device (Solid State Device, SSD) uses a NAND flash memory (NAND flash memory) as a main storage element, and the flash memory is a non-volatile memory. That is to say, after the data is written into the flash memory, even if the system power is turned off, the data is still saved in the flash memory. [0003] Basically, each memory cell of the flash memory includes a floating gate transistor. When performing a program action, hot carriers are injected into the floating gate of the floating gate transistor, and the threshold voltage of the floating gate transistor can be changed according to the number of injected hot carriers ( thresholdvoltage), and then determin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06G11C16/10
CPCG06F3/0614G06F3/0679G11C16/10
Inventor 李旻轩庄森铭刘人诚
Owner SOLID STATE STORAGE TECH CORP