Crimping-type IGBT device
A crimping and device technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of IGBT devices that cannot fully exert their potential, large IGBT device volume, and large waste of IGBT chips, so as to avoid changes in electrical characteristics, The effect of saving resources and avoiding waste
Inactive Publication Date: 2017-04-26
SHANGHAI LIANXING ELECTRONICS +1
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Problems solved by technology
[0003] When the traditional IGBT device is packaged, the collector on the back of the IGBT chip is directly welded to the conductive substrate of the IGBT device, and the emitter on the front is connected to the external electrode of the IGBT device through a lead. However, due to the parasitic inductance of the lead itself, And the leads cannot conduct heat, which leads to the inability of the IGBT device to fully develop its own potential in high-power applications
Therefore, a pressure-connected IGBT device has been proposed to solve the above problems, but the waste of the IGBT chip in the existing pressure-connected IGBT device is too large, and the volume of the IGBT device is large
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[0023] As described in the background art, the existing crimping type IGBT device wastes too much IGBT chip, and the IGBT device has a large volume. The inventor found that the main reason for the above problems is that the IGBT chip has a special crimping area. Specifically, in the cell of the IGBT chip, the well area is a pressure sensitive area, so the well area will undergo significant electrical characteristics changes under pressure.
[0024] Therefore, reference figure 1 Shown is a schematic structural diagram of an existing crimping type IGBT device, where the IGBT device includes a first metal electrode 200 crimped with the front side of the IGBT chip 100, and a second metal electrode 200 crimped with the back side of the IGBT chip 100 With the metal electrode 300, the front surface of the IGBT chip 100 is divided into an effective area 101 and a crimping area 102. The effective area 101 includes a plurality of cells, and the crimping area 102 is a P-type doped area. Am...
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The invention discloses a crimping-type IGBT device, and the device comprises an IGBT chip and a first metal electrode. There is a first preset distance between the first metal electrode and crimping region of an emitter electrode of the IGBT chip and the opposite edges of a first well region, and there is a second preset distance between the first metal electrode and crimping region of the emitter electrode and the opposite edges of a second well region. The first and second preset distances can be set according to a specific IGBT device, so as to enable the pressure generated by first metal electrode and the emitter electrode during crimping not to affect the first and second well regions of the IGBT chip, and prevent the first and second well regions from generating electric characteristic changes. Therefore, compared with a conventional IGBT device, the IGBT device provided by the invention does not need to design a special crimping region on the IGBT chip, thereby avoiding the waste of the IGBT chip, saving resources, reducing the cost, and reducing the size of the IGBT device.
Description
Technical field [0001] The present invention relates to the field of IGBT technology, and more specifically, to a crimping type IGBT device. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) device is a voltage-controlled power device with the high input impedance of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) And BJT (Bipolar Junction Transistor, bipolar junction transistor) two advantages in terms of low turn-on voltage drop, because IGBT devices have the advantages of small driving power and reduced saturation voltage, IGBT devices are currently widely used as a high-voltage switch. field. [0003] When packaging traditional IGBT devices, the collector on the back of the IGBT chip is directly welded to the conductive substrate of the IGBT device, while the emitter on the front is connected to the external electrode of the IGBT device through a lead. However, due to the parasitic inductance of the lead itself...
Claims
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IPC IPC(8): H01L29/739H01L29/417
CPCH01L29/41708H01L29/7398
Inventor 滕渊朱阳军卢烁今田晓丽
Owner SHANGHAI LIANXING ELECTRONICS