Unlock instant, AI-driven research and patent intelligence for your innovation.
Epitaxial wafer of gallium nitride-based light-emitting diode and preparation method thereof
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A light-emitting diode, gallium nitride-based technology, used in semiconductor devices, electrical components, circuits, etc., can solve problems such as lattice mismatch, affecting luminous efficiency, etc., to improve compound efficiency, improve luminous efficiency, and solve adverse effects. Effect
Active Publication Date: 2019-06-11
HC SEMITEK ZHEJIANG CO LTD
View PDF7 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0005] The lattice mismatch between the sapphire substrate and the gallium nitride lattice causes stress and polarization during the epitaxial growth process, and MOCVD in-situ growth causes defects and dislocations to extend to the multi-quantum well layer along the growth direction, affecting the entire LED luminous efficiency
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0027] An embodiment of the present invention provides an epitaxial wafer of a gallium nitride-based light-emitting diode, see figure 1 , the epitaxial wafer includes a sapphire substrate 1 , and a buffer layer 2 , an undoped GaN layer 3 , an N-type layer 4 , an active layer 5 and a P-type layer 6 sequentially stacked on the sapphire substrate 1 .
[0028] In this embodiment, the active layer is composed of several InGaN quantum dots.
[0029] Optionally, the particle size of the InGaN quantum dots may be 0.2-20 nm.
[0030] Optionally, the thickness of the active layer may be 2-150 nm.
[0031] In an implementation of this embodiment, InGaN quantum dots can be laid on the N-type layer.
[0032] In another implementation of this embodiment, the InGaN quantum dots can be adsorbed on the carrier layer, and the carrier layer is laid on the N-type layer.
[0033] Optionally, the material of the carrier layer can be ZnO, TiO 2 , GaN, GaO in one or more.
[0034] Preferably, th...
Embodiment 2
[0043] An embodiment of the present invention provides a method for preparing an epitaxial wafer of a gallium nitride-based light-emitting diode, which is suitable for preparing the epitaxial wafer provided in Embodiment 1. See figure 2 , the preparation method comprises:
[0044] Step 201: put the sapphire substrate into the MOCVD equipment, 2 Perform high temperature treatment on the sapphire substrate in the atmosphere for 10-15 minutes.
[0045] Step 202: controlling the temperature to 400-600° C. and the pressure to 400-600 Torr, and growing a buffer layer on the sapphire substrate in situ.
[0046] Specifically, the buffer layer may be a GaN layer.
[0047] Optionally, the thickness of the buffer layer may be 15-35 nm.
[0048] Step 203 : controlling the temperature to 1000-1100° C. and the pressure to 100-500 Torr, and growing an undoped GaN layer on the buffer layer.
[0049] Optionally, the thickness of the undoped GaN layer may be 1-5 μm.
[0050] Step 204: Con...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Login to View More
Abstract
The invention discloses an epitaxial wafer of a gallium-nitride-based light emitting diode, and a preparation method of the epitaxial wafer, which belong to the technical field of semiconductors. The epitaxial wafer comprises a sapphire substrate, and a buffer layer, an un-doped GaN layer, an N-type layer, an active layer and a P-type layer which are sequentially laminated on the sapphire substrate, wherein the active layer is composed of a plurality of InGaN quantum dots. According to the epitaxial wafer, the active layer is composed of the plurality of InGaN quantum dots, and the InGaN quantum dots can interdict the continuous extension of defect and dislocation formed by in-situ growth, thereby eliminating the adverse effects caused by the stress and polarization due to epitaxial growth, and improving luminous efficiency of the LED.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a gallium nitride-based light-emitting diode and a preparation method thereof. Background technique [0002] Gallium nitride (GaN) has good thermal conductivity, high temperature resistance, acid and alkali resistance, high hardness and other characteristics, and is widely used in light emitting diodes (English: Light Emitting Diode, abbreviated: LED) in various wavelength bands. The core component of a GaN-based LED is a chip, which includes an epitaxial wafer and electrodes on the epitaxial wafer. [0003] GaN-based LED epitaxial wafers are usually prepared by metal-organic compound chemical vapor deposition (English: Metal-organic Chemical Vapor Depositio, referred to as: MOCVD) in-situ preparation technology, and sequentially grow GaN buffer layer, undoped GaN layer, N Type GaN layer, multiple quantum well layer and P-type GaN layer. Wherein, th...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More 
Login to View More