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Hybridized CMP conditioner

A technology of chemical machinery and dresser, applied in the direction of grinding tools, grinding machine parts, grinding/polishing equipment, etc., can solve the problem of insufficient dressing ability and achieve good cutting force effect

Inactive Publication Date: 2017-05-03
KINIK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The main purpose of the present invention is to solve the problem of insufficient dressing ability of known hybrid chemical mechanical grinding trimmers

Method used

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  • Hybridized CMP conditioner
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  • Hybridized CMP conditioner

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Embodiment Construction

[0037] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments to further understand the purpose, solution and effect of the present invention, but it is not intended to limit the scope of protection of the appended claims of the present invention.

[0038] see figure 1 and figure 2 Shown are respectively the top view of the first embodiment of the present invention and figure 1The A-A direction sectional schematic diagram, as shown in the figure, the hybrid chemical mechanical polishing dresser of the present invention includes a base 10, a first grinding unit 20 and a plurality of second grinding units 30, and the first grinding unit 20 includes a The first bonding layer 21 disposed on the base 10, a grinding unit substrate 22 disposed on the first bonding layer 21 and a grinding layer 23 disposed on the grinding unit substrate 22, the second grinding unit 30 Respectively comp...

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Abstract

The invention discloses a hybridized CMP (chemical mechanical polishing) conditioner, including a base, a first abrasive unit and a plurality of second abrasive units. The first abrasive unit includes a first bonding layer, a substrate for abrasive unit provided on the first bonding layer and an abrasive layer provided on the substrate for abrasive unit. The abrasive layer is a diamond coating. The diamond coating is provided on the surface thereof with a plurality of abrasive tips. Each second abrasive unit includes a second bonding layer, a carrying post provided on the second bonding layer, an abrasive particle provided on the carrying post and an abrasive material-bonding layer provided between the carrying post and the abrasive particle. The CMP conditioner is provided with both excellent cutting force and flattening capability through the first abrasive unit provided with the abrasive layer and the second abrasive units provided with the abrasive particles.

Description

technical field [0001] The invention relates to a chemical mechanical grinding and finishing device, especially a hybrid chemical mechanical grinding and finishing device. Background technique [0002] Chemical Mechanical Polishing (CMP) is a planarization technology widely used in semiconductor manufacturing processes. A common chemical mechanical polishing process is to use a polishing pad (or polishing pad) fixed on a rotating table to contact and A force is applied to a silicon wafer carried on a spintable carrier. During polishing, the carrier and the turntable will rotate and provide a polishing slurry to the polishing pad. Generally speaking, the debris and slurry caused by grinding will accumulate in the holes in the polishing pad, which will cause wear and tear on the polishing pad and reduce its polishing effect on the wafer. Therefore, it is necessary to use a conditioner to move Remove debris and slurry remaining in the abrasive pad. [0003] In order to allow ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B53/12B24B37/20
CPCB24B37/20B24B53/12B24B53/017
Inventor 周瑞麟邱家丰陈裕泰廖文仁苏学绅
Owner KINIK