Preparation method of a fully controllable bending point nanowire array

Abstract

The invention relates to a preparation method for a bent nanometer wire array with a fully controllable bending angle. The preparation method comprises the following steps of: (1) cleaning and drying a workpiece made from a silicon or III-V group semiconductor material; (2) depositing single-layer polystyrene (PS) balls on the workpiece, reducing the diameter of the PS balls through reactive ion etching, and then evaporating titanium (Ti) and gold (Au) coatings in turn; (3) preparing corresponding etching fluids according to different etching angles, wherein the etching fluids can be used for etching along a certain crystal orientation of the workpiece; (4) putting the workpiece into the etching fluid corresponding to a starting angle and controlling the etching length by controlling the etching time; and (5) taking out the workpiece, cleaning and drying, and then soaking into the etching fluid corresponding to a preset etching angle and then etching, controlling the etching length by controlling the etching time, cleaning and drying after etching, and repeating the steps (4) and (5) if a plurality of bent points are required. According to the method provided by the invention, the bent nanometer wire array with the fully controllable bending angle formed on the workpiece can be realized, the operation is simple and the cost is low.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing technology, in particular to a preparation method of a fully controllable bending point nanowire array. Background technique [0002] Breakpoint semiconductor nanowires have many superior properties and have broad application prospects in microelectronic devices, microfluidic devices, sensors, etc. [0003] At present, the methods for preparing semiconductor nanowire arrays mainly include: chemical vapor deposition (chemical vapor deposition, CVD), laser ablation method (laser ablation method), physical vapor deposition (physical vapor deposition, PVD) and so on. However, due to the limitations of the growth mechanism, the chemical vapor deposition method usually requires complex and expensive equipment such as high vacuum, resulting in a sharp increase in cost; laser ablation and physical vapor deposition methods are difficult to prepare ordered arrays of silicon nanowire...

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Problems solved by technology

However, since the direction is the easiest direction to start in the etching process, the method for preparing the bent silicon nanowire array proposed in Chinese patent CN102040192B can only process silicon wafers with a special crystal direction , and only Can form a fixed-angle inflection point, the specific value is the angle between the direction and the direction, and the position, number, and bending angle of the inflection point are completely uncontrollable; Hydrofluoric acid (HF) and silver nitrate (AgNO 3 ) ratio to prepare bent silicon nanowire arrays; due to the effective components of hydrofluoric acid (HF) and hydrogen peroxide (H 2 o 2 ) is fixed, only by adjusting hydrofluoric acid (HF) and hydrogen peroxide (H 2 o 2 ), therefore, its etching direction can only be etched along the fixed and crystal directions on the silicon wafer, and the resulting bending angles are limited and cannot be etched in other directions, such as 112>, and other directions, cannot fully control the bending angle of the kink

At present, there is still no effective solution to prepare nanowire arrays with fully controllable bending angles, and further efficient and feasible solutions need to be proposed

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