Europium-doped gadolinium oxide luminescent material as well as preparation method and application thereof
A technology of luminescent materials, gadolinium oxide, applied in luminescent materials, chemical instruments and methods, electrical components, etc.
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[0036] The preparation method of the above-mentioned europium-doped gadolinium oxide luminescent material comprises the following steps:
[0037] Step S11, according to Gd 2 o 3 :xEu 3+ The stoichiometric ratio of each element is weighed, wherein, x is 0.01-0.08.
[0038] In step S12, the organic source is respectively selected from tris(2,2,6,6-tetramethyl-3,5-heptanedionate) gadolinium Gd(DPM) 3 and tris(2,2,6,6-tetramethyl-3,5-heptanedionate) europium Eu(DPM) 3 , the molar ratio is 1-x:x, and the vacuum degree of the chamber is pumped to 1.0×10 with a mechanical pump and a molecular pump -2 Pa~1.0×10 -3 Pa, the substrate is heat-treated at 700°C for 10-30 minutes, the rotation speed of the substrate holder is adjusted to 50-1000 rpm, and the carrier gas Ar gas is introduced at a flow rate of 5-15 sccm, and then oxygen is introduced at a flow rate of 10-10 sccm. 200sccm, start the deposition of thin film, obtain chemical formula to be Gd2O3:xEu 3+ s material.
[0039...
Embodiment 1
[0052] Example 1: The substrate is ITO glass purchased by CSG, and it is ultrasonically cleaned with toluene, acetone and ethanol for 5 minutes, then rinsed with distilled water, air-dried with nitrogen, and sent to the reaction chamber of the equipment. Use a mechanical pump and a molecular pump to evacuate the chamber to a vacuum of 4.0×10-3Pa; then heat-treat the substrate at 700°C for 20 minutes, and then lower the temperature to 500°C. Turn on the rotating motor, adjust the speed of the substrate holder to 300 rpm, and feed tris(2,2,6,6-tetramethyl-3,5-heptanedionate) gadolinium Gd(DPM) 3 and tris(2,2,6,6-tetramethyl-3,5-heptanedionate) europium Eu(DPM) 3 The carrier gas Ar gas, the flow rate is 10 sccm. Oxygen gas was introduced with a flow rate of 120 sccm to start the deposition of the film. The thickness of the film is deposited to 150nm, close the organic source and carrier gas, continue to pass oxygen, the temperature drops below 100°C, and take out the sample Gd ...
Embodiment 2
[0053] Embodiment 2: The substrate is ITO glass purchased by CSG, and it is ultrasonically cleaned for 5 minutes with toluene, acetone and ethanol successively, then rinsed with distilled water, and sent to the equipment reaction chamber after being air-dried with nitrogen. Use a mechanical pump and a molecular pump to evacuate the chamber to a vacuum of 1.0×10-3Pa; then heat-treat the substrate at 700°C for 10 minutes, and then lower the temperature to 250°C. Turn on the rotating motor, adjust the speed of the substrate support to 50 rpm, and feed tris(2,2,6,6-tetramethyl-3,5-heptanedionate) gadolinium Gd(DPM) 3 and tris(2,2,6,6-tetramethyl-3,5-heptanedionate) europium Eu(DPM) 3 The carrier gas Ar gas was fed with oxygen, and the flow rate was 10 sccm, and the deposition of the film was started. The thickness of the film is deposited to 80nm, close the organic source and carrier gas, continue to pass oxygen, the temperature drops below 100°C, and take out the sample Gd 2 o ...
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