7 results about "Electroluminescence spectra" patented technology

Provided are a display panel and a display device. In the display panel, first sub-pixels are configured to emit light of a first color, second sub-pixels are configured to emit light of a second color, and third sub-pixels are configured to emit light of a third color. The first sub-pixels, the second sub-pixels, and the third sub-pixels at least satisfy one of the following relationships: relationship I: the difference between the color gamut x-coordinate of the light of the second color and the color gamut x-coordinate of the light of the third color is within the range of ±0.02 of the color gamut y-coordinate of the light of the third color, and the color gamut y-coordinate of the light of the first color is not greater than the color gamut x-coordinate and / or the color gamut y-coordinate of a white point formed by synthesizing the light of the first color, the light of the second color, and the light of the third color; and relationship II: the difference between the maximum value and the minimum value of the half-peak widths of the electroluminescence spectra of the first sub-pixels, the second sub-pixels, and the third sub-pixels is less than or equal to 11 nm, and the difference between the half-peak widths of the electroluminescence spectrum and photoluminescence spectrum of each sub-pixel is less than or equal to 16 nm.

The invention provides a display panel and a display device. In the display panel, a first sub-pixel is configured to emit a first color light, a second sub-pixel is configured to emit a second color light, and a third sub-pixel is configured to emit a third color light. The first sub-pixel, the second sub-pixel and the third sub-pixel at least meet one of the following relations: relation 1: the difference value of the color gamut abscissa of the second color light and the color gamut abscissa of the third color light is within the range of + / -0.02 of the color gamut ordinate of the third color light; the color gamut ordinate of the first color light is not greater than the color gamut abscissa and / or the color gamut ordinate of a white point synthesized by the first color light, the second color light and the third color light; the second relation is that the difference value of the maximum value and the minimum value of the half-peak width of the electroluminescence spectrum of the first sub-pixel, the second sub-pixel and the third sub-pixel is smaller than or equal to 11 nm, and the difference value of the half-peak width of the electroluminescence spectrum and the half-peak width of the photoluminescence spectrum of each sub-pixel is smaller than or equal to 16 nm.

The application provides a luminescent material containing a cyclobutadiene structure, a preparation method and application, and relates to the technical field of organic electroluminescent materials.The luminescent material containing a cyclobutadiene provided by the application is fused to a binary nitrogen-containing fused heterocyclic skeleton by using anti-aromatic cyclobutadiene, the anti-aromatic special electronic structure and high ring tension of the anti-aromatic cyclobutadiene are utilized to inhibit excited state vibration relaxation and realize narrow-band luminescence.By introducing a steric hindrance effect group, the aggregation-induced fluorescence quenching phenomenon between luminescent mother nuclei is weakened, and the fluorescence quantum yield is improved.Different from the current mainstream multiple resonance mechanism, the narrow-spectrum luminescent molecule design provided by the application does not need to depend on the construction of B / N-hetero-fused rings, and the molecular structure can be simplified to realize full-color super-narrow-band luminescence.The application is applied to an organic electroluminescent device, and can realize an electroluminescent spectrum with a super-narrow full width at half maximum and high device efficiency, and provides a better solution for super-high-definition organic light-emitting diode display technology.

The application discloses an automatic evaluation system for performance loss caused by defects of a solar cell, wherein an input module is used to read electroluminescence spectra, external quantum efficiency and a group of electroluminescence images collected under different forward injection current densities of the solar cell; a cell edge detection module is used to determine the accurate position of the solar cell in the electroluminescence images; a cell defect recovery module is used to identify defect areas on the surface of the solar cell, calculate the predicted luminescence intensity of each defect area and recover the defects; a cell volt-ampere characteristic calculation module is used to obtain actual or predicted volt-ampere characteristic curves of the solar cell according to the relationship between actual or predicted electroluminescence intensity and the internal voltage of the cell; and a cell performance loss evaluation module is used to obtain actual or predicted performance parameters of the cell according to the actual or predicted volt-ampere characteristic curves, compare the actual or predicted performance parameters, and quantitatively evaluate the performance loss of the solar cell caused by the defects.

The invention provides a method for improving spectrum heat resistance of perovskite nanocrystals and photoelectric devices thereof through anion post-treatment, and belongs to the technical field of semiconductor nanomaterials and photoelectric devices. According to the method, an organic group-anion compound is used for carrying out solution post-treatment on the perovskite nanocrystal, and the thermal excitation formation energy of the defect is remarkably improved through the vacancy defect that anions occupy the surface of the nanocrystal, so that the thermally induced fluorescence quenching phenomenon is effectively inhibited. The processed perovskite nanocrystal can maintain excellent fluorescence intensity under a heating condition, and a photoelectric device assembled by using the perovskite nanocrystal as a luminescent layer also shows significantly improved electroluminescent spectrum stability in a high-temperature working environment. The method is simple in process and suitable for various perovskite material systems and device structures, and an effective scheme is provided for solving the thermal stability problem of the perovskite material.

This invention discloses a method for preparing a blue light-emitting thin film, the blue light-emitting thin film, and a light-emitting device. The method involves dissolving a mixture of cesium bromide, lead bromide, lead chloride, and an organic ligand in dimethyl sulfoxide solvent to obtain a precursor solution. An additional ligand is added to the precursor solution to obtain a perovskite precursor solution. An additive is added to the perovskite precursor solution, and the mixture is stirred for a predetermined first time to obtain a homogeneous solution. The homogeneous solution is then spin-coated in a nitrogen-filled glove box, with an antisolvent added during the spin-coating process to obtain a raw thin film. The raw thin film is annealed and then vacuum-dried to obtain a blue light-emitting perovskite thin film. The above method uses amine salts as organic ligands and small-molecule amine salts as additional ligands, ultimately resulting in a significant improvement in the photoluminescence quantum efficiency, maximum external quantum efficiency, and maximum power efficiency of the prepared blue light-emitting perovskite thin film, as well as achieving high maximum brightness and a stable electroluminescence spectrum.

A light emitting diode according to an exemplary embodiment of the present disclosure includes: a first conductivity type nitride semiconductor layer; a V-pit generation layer disposed on the n-type nitride semiconductor layer and having a V-pit; a lower active layer disposed on the V-pit generation layer; an upper active layer disposed on the lower active layer; an intermediate layer disposed between the lower active layer and the upper active layer; a second conductivity type nitride semiconductor layer disposed on the upper active layer, an upper step coverage layer disposed between the second conductivity type semiconductor layer and the upper active layer; and a lower step coverage layer disposed between the intermediate layer and the lower active layer, in which in an electroluminescence spectrum, the light emitting diode emits light having a highest peak intensity in a wavelength range of 500 nm or more in a visible light region.