Cerium terbium double-doped nitrogen silicon lanthanum luminescent material and preparation method and application thereof

A luminescent material and double-doping technology, applied in luminescent materials, electroluminescent light sources, chemical instruments and methods, etc.

Inactive Publication Date: 2014-12-03
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, cerium and terbium double-doped silicon nitride lanthanum luminescent materials that can be applied to thin film electroluminescent displays have not been reported yet.

Method used

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  • Cerium terbium double-doped nitrogen silicon lanthanum luminescent material and preparation method and application thereof
  • Cerium terbium double-doped nitrogen silicon lanthanum luminescent material and preparation method and application thereof
  • Cerium terbium double-doped nitrogen silicon lanthanum luminescent material and preparation method and application thereof

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preparation example Construction

[0032] The preparation method of the above-mentioned cerium-terbium double-doped silicon-lanthanum nitride luminescent material comprises the following steps:

[0033] Step S11, according to La 2 Si 6 N 10 :xCe 3+ , yTb 3+ The stoichiometric ratio of each element weighs LaN, Si 3 N 4 , CeN and TbN powder, wherein, x is 0.01-0.05, and y is 0.01-0.06.

[0034] In this step, preferably, x is 0.02 and y is 0.03.

[0035]In this step, preferably, LaN, Si 3 N 4 , the molar ratio of CeN and TbN powder is 2:2:(0.01~0.05):(0.01~0.06);

[0036] Step S12, sintering the mixed powder at 900°C-1300°C for 0.5-5 hours to obtain the cerium-terbium double-doped lanthanum-silicon-nitride luminescent material, whose chemical formula is La 2 Si 6 N 10 :xCe 3+ , yTb 3+ , wherein, x is 0.01-0.05, and y is 0.01-0.06.

[0037] In this step, it is preferable to sinter at 1250° C. for 3 hours.

[0038] A cerium-terbium double-doped lanthanum-silicon-nitride luminescent film according to ...

Embodiment 1

[0065] The powder with a purity of 99.99% is selected, and LaN, Si 3 N 4 , CeN and TbN powders are uniformly mixed according to the molar ratio of 2:2:0.02:0.03, and then sintered at 1250°C to form a ceramic target with a diameter of 50mm and a thickness of 2mm, and the target is loaded into a vacuum chamber. Then, the glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, treated with oxygen plasma, and placed in a vacuum chamber. The distance between the target and the substrate was set to 60mm. Use a mechanical pump and a molecular pump to pump the vacuum of the cavity to 5.0×10 -4 Pa, the working gas flow rate of oxygen is 20sccm, the pressure is adjusted to 3.0Pa, the substrate temperature is 500°C, and the laser energy is 150W. The chemical formula of the obtained sample is La 2 Si 6 N 10 : 0.02Ce 3+ , 0.03Tb 3+ luminescent thin film, and then vapor-deposit a layer of Ag on the luminescent thin film as...

Embodiment 2

[0071] The powder with a purity of 99.99% is selected, and LaN, Si 3 N 4, CeN and TbN powders are uniformly mixed according to the molar ratio of 2:2:0.01:0.01, and then sintered at 900°C to form a ceramic target with a diameter of 50mm and a thickness of 2mm, and the target is loaded into a vacuum chamber. Then, the glass substrate with ITO was ultrasonically cleaned with acetone, absolute ethanol and deionized water successively, treated with oxygen plasma, and placed in a vacuum chamber. The distance between the target and the substrate was set to 45mm. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -3 Pa, the working gas flow rate of oxygen is 10sccm, the pressure is adjusted to 0.5Pa, the substrate temperature is 250°C, and the laser energy is 80W. The chemical formula of the obtained sample is La 2 Si 6 N 10 : 0.01Ce 3+ , 0.01Tb 3+ luminescent thin film, and then vapor-deposit a layer of Ag on the luminescent thin film ...

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Abstract

A cerium terbium double-doped nitrogen silicon lanthanum luminescent material has a chemical formula of La2Si6N10:xCe<3+>, yTb<3+>, wherein La2Si6N10 is a matrix, Ce<3+> and Tb<3+> are active elements, x is 0.01-0.05 and y is 0.01-0.06. In the electroluminescent spectra (EL) of a light-emitting film prepared by the cerium terbium double-doped nitrogen silicon lanthanum luminescent material, 490nm and 580nm wavelength regions both have strong light-emitting peaks, so that the light-emitting film can be used in a thin film electroluminescent display. The invention also provides a preparation method and application of the cerium terbium double-doped nitrogen silicon lanthanum luminescent material.

Description

【Technical field】 [0001] The invention relates to a cerium terbium double-doped silicon lanthanum nitrogen luminescent material, a preparation method thereof, a cerium terbium double doped nitrogen silicon lanthanum luminescent film, a preparation method thereof, a thin film electroluminescent device and a preparation method thereof. 【Background technique】 [0002] Thin film electroluminescent display (TFELD) has attracted widespread attention and developed rapidly due to its advantages such as active light emission, full solid state, impact resistance, fast response, large viewing angle, wide application temperature, and simple process. At present, the research on color and even full-color TFELD and the development of multi-band luminescent materials are the development direction of this subject. However, cerium and terbium double-doped silicon lanthanum nitride light-emitting materials that can be applied to thin film electroluminescent displays have not been reported yet....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/79H05B33/14
Inventor 周明杰王平陈吉星张娟娟
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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