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Polysilicon wafer containing inverted pyramid textured structure and its application

A technology of polycrystalline silicon wafers and quadrangular pyramids, which is applied in the field of solar cells, can solve the problem of anti-reflection effect, the efficiency of silicon wafer cells is difficult to be further improved, and the size is different.

Active Publication Date: 2018-05-25
北京普扬科技有限公司
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Problems solved by technology

[0007] However, since the shape of the inverted pyramid structure is fixed, only the size is different, the angle of reflection to sunlight is fixed, and it is difficult to further improve the effect of anti-reflection and the efficiency of silicon wafer cells; therefore, the existing In technology, it is necessary to provide a textured structure that can further improve the efficiency of silicon wafer cells

Method used

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  • Polysilicon wafer containing inverted pyramid textured structure and its application
  • Polysilicon wafer containing inverted pyramid textured structure and its application
  • Polysilicon wafer containing inverted pyramid textured structure and its application

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preparation example Construction

[0058] In a specific embodiment, the preparation method comprises the steps of:

[0059] 1) The polycrystalline silicon wafer is placed in an acidic texturing solution, etched at 20°C to 35°C for 1 to 10 minutes, and the metal ions on the surface of the silicon wafer are cleaned and removed;

[0060] 2) Put the cleaned polysilicon wafer with the textured structure of the inverted square pyramid in alkali solution, carry out structural modification at 20° C. to 30° C. for 5-90 seconds, and then wash to obtain the finished product.

[0061] Specifically, in step 1), the etching temperature can be 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34 or 35°C; the etching time can be for 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10 minutes.

[0062] In step 2), the structural modification temperature can be 20, 21, 22, 23, 24, 25, 26, 27, 28, 29 or 30°C; the structural modification time can be 5, 10, 20, 30, 40, 50 , 60, 70, 80 or 90s.

[0063] In order to obtain the best technical eff...

Embodiment 1

[0066] 1) Place the silicon wafer in HF+HNO 3 Carry out chemical etching in the solution to remove the damaged layer on the surface of polysilicon.

[0067] 2) Dip the cleaned silicon wafer into a texturing solution for etching to form a submicron inverted quadrangular pyramid textured structure on the surface of the polysilicon. The composition of the texturing solution is 1 mmol / L AgNO 3 +100mmol / L of Cu(NO 3 ) 2 +2.0mol / L of HF+0.4mol / L of H 2 o 2 , the reaction temperature is 30°C, and the reaction time is 400s;

[0068] 3) Clean the silicon wafer in deionized water; immerse the textured silicon wafer in HNO 3Washing in solution to remove surface metal nanoparticles; washing with deionized water;

[0069] 4) Dip the silicon wafer into NaOH alkali solution to make the suede structure on the surface of the silicon wafer smooth;

[0070] 5) Clean the silicon wafer in deionized water; place the cleaned silicon wafer in HCl+H 2 o 2 Washing in the solution to remove met...

Embodiment 2

[0074] 1) Place the silicon wafer in HF+HNO 3 Carry out chemical etching in the solution to remove the damaged layer on the surface of polysilicon.

[0075] 2) Dip the cleaned silicon wafer into a texturing solution for etching to form a submicron inverted quadrangular pyramid textured structure on the surface of the polysilicon. The composition of the texturing solution is 1 mmol / L AgNO 3 +50mmol / L of Cu(NO 3 ) 2 +2.5mol / L of HF+0.6mol / L of H 2 o 2 , the reaction temperature is 25°C, and the reaction time is 490s;

[0076] 3) Clean the silicon wafer in deionized water; immerse the textured silicon wafer in HNO 3 Washing in solution to remove surface metal nanoparticles; washing with deionized water;

[0077] 4) Dip the silicon wafer into NaOH alkali solution to make the suede structure on the surface of the silicon wafer smooth;

[0078] 5) Clean the silicon wafer in deionized water; place the cleaned silicon wafer in HCl+H 2 o 2 Washing in the solution to remove met...

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Abstract

The invention relates to textured structures for a polycrystalline silicon wafer and an application of the polycrystalline silicon wafer, in particular to a polycrystalline silicon wafer containing inverted rectangular pyramid textured structures and an application of the polycrystalline silicon wafer in a solar cell, and belongs to the technical field of solar cells. An inverted rectangular pyramid group comprises one or more inverted rectangular pyramids of which the ratios of the heights to the lengths of bottom edges are (0.7-6):1; and the opening directions of the inverted rectangular pyramid structures are consistent with the orientations of corresponding crystalline grains. The invention further provides a texturing method of the polycrystalline silicon wafer.

Description

technical field [0001] The invention relates to a textured structure of a silicon chip and its application, in particular to a polycrystalline silicon chip with an inverted pyramid textured structure and its application in solar cells, belonging to the technical field of solar cells. Background technique [0002] Silicon-based solar cells are the most widely produced solar cells in the industry, and the important technical problem therein lies in the high reflectivity of the silicon surface. In order to solve this technical problem, applying silicon wafers with a textured structure to solar cells is one of the effective ways to reduce the cost of solar cells and further improve the photoelectric conversion efficiency. Since it was discovered in 1998, it has been widely accepted by researchers and industries. attention. [0003] Common textured textures include irregular raised, porous silicon surfaces, and textured textures on pyramid and inverted pyramid shaped surfaces. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/0236H01L31/18Y02E10/50Y02P70/50
Inventor 陈全胜陈伟吴俊桃赵燕王燕刘尧平徐鑫杜小龙
Owner 北京普扬科技有限公司
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