Chemical mechanical polishing device without rotation end point

Abstract

The invention discloses a chemical mechanical polishing device without a rotation end point. The chemical mechanical polishing device without the rotation end point comprises a polishing head carrying mechanism, a polishing head control assembly, and a non-contact power supply system. The polishing head carrying mechanism comprises a circular railway; the circular railway is fixed with a stand column through a support; the polishing head control assembly is slidably arranged on the outer side of the circular railway; a polishing head control unit for controlling the polishing head control assembly and a polishing head to operate is arranged in the polishing head control assembly; and the non-contact power supply system comprises a power supply part arranged along the circular railway and a current collection part arranged in the polishing head control assembly at a relative clearance. According to the chemical mechanical polishing device without the rotation end point provided by the invention, an existing power transmission way adopting cable connection is changed to a non-contact power transmission way, power is supplied to the power supply part to generate a magnetic field, and a magnetic induction current is generated by the the current collection part and is outputted to the polishing head control unit so as to drive the polishing head control assembly to move along the railway, so that the movement of the polishing head cannot be influenced by the length of a cable, the polishing head can continuously move along one direction without limit, the no-load phenomenon of the polishing head is avoided, and the utilization efficiency of machine table is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit equipment, and more specifically, to a chemical mechanical polishing device without a rotation end point. Background technique [0002] In the field of semiconductors, chemical mechanical polishing (CMP) is an integral part of the semiconductor process. However, due to technical relations, the output of CMP is relatively low compared with the process equipment at the front and back stations, which is especially obvious in the back-end copper process. [0003] In order to change this status quo, CMP main equipment began to develop in the direction of large-scale and multiple polish heads. Correspondingly, the grinding table (platen) has also become larger, and the size of the grinding pad (pad) has also increased to 42 inches or even larger, making space management more complicated. [0004] At the same time, the production capacity of CMP is lower than that of the previo...

AI Technical Summary

Problems solved by technology

One of the disadvantages of this arrangement is that the grinding head cannot be moved continuously in one direction, i.e. the grinding head cannot be moved more than the length of the cable

When the moving distance of the grinding head is too long, it must return to the original point and move again. The possible problem is that each grinding head will have a period of no-load operation to return to the original point every once in a while, and the accumulation of time will also affect the production capacity.

The second disadvantage is the limitation of the space on the top of the machine table for cable laying. Cable laying requires to avoid mutual interference between cables and have enough stretching space. As a result, the current number of grinding heads is generally about 4, at most 6

At the same time, if due to misoperation, it may also cause excessive movement of the grinding head, damage the cable and cause logic confusion, and eventually cause shutdown

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