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Method for producing nitride semiconductor laminate, and nitride semiconductor laminate

A technology of nitride semiconductor and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor device, coating and other directions, can solve the problems of reduced on-resistance, increased electron density and mobility, etc.

Inactive Publication Date: 2017-05-17
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the electron density and mobility in the two-dimensional electron gas layer 1008 increase, and the on-resistance decreases.

Method used

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  • Method for producing nitride semiconductor laminate, and nitride semiconductor laminate
  • Method for producing nitride semiconductor laminate, and nitride semiconductor laminate
  • Method for producing nitride semiconductor laminate, and nitride semiconductor laminate

Examples

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Effect test

no. 1 Embodiment approach

[0079] First, the nitride semiconductor multilayer substrate and its manufacturing method according to the first embodiment of the present invention will be described with reference to the drawings.

[0080] figure 1 It is a schematic cross-sectional view showing the structure of the switching element SA using the nitride semiconductor multilayer substrate 10A according to the first embodiment of the present invention.

[0081] Such as figure 1 As shown, the nitride semiconductor stacked substrate 10A according to the first embodiment of the present invention includes: a substrate 11; a buffer layer 12 formed on the upper surface of the substrate 11; Transit layer 13 ; and electron supply layer 14 formed on the upper surface of electron transit layer 13 . Formation of each layer on the substrate 11 is carried out in a reaction furnace not shown. In addition, the lower surface of the electron supply layer 14 is in contact with the upper surface of the electron transit laye...

no. 2 Embodiment approach

[0104] Next, a nitride semiconductor multilayer substrate and a manufacturing method thereof according to a second embodiment of the present invention will be described with reference to the drawings.

[0105] image 3 It is a schematic cross-sectional view showing the structure of the switching element SB using the nitride semiconductor multilayer substrate 10B according to the second embodiment of the present invention. also, Figure 4 It is a timing chart showing changes in the substrate temperature, furnace pressure, and supply amount of source gases in the electron transit layer forming step and the electron supply layer forming step of the above-mentioned nitride semiconductor multilayer substrate 10B. in addition, image 3 with Figure 4 is used with the above-mentioned first embodiment figure 1 with figure 2 The method is the same as the figure showing the structure and manufacturing method of the nitride semiconductor laminated substrate 10B of the second embod...

no. 3 Embodiment approach

[0122] Next, a nitride semiconductor multilayer substrate and a manufacturing method thereof according to a third embodiment of the present invention will be described with reference to the drawings.

[0123] Figure 5 It is a schematic cross-sectional view showing the structure of the switching element SC using the nitride semiconductor multilayer substrate 10C according to the third embodiment of the present invention. also, Image 6 It is a timing chart showing changes in the substrate temperature, furnace pressure, and supply amount of source gases in the electron transit layer forming step and the electron supply layer forming step of the nitride semiconductor multilayer substrate 10C. in addition, Figure 5 with Image 6 is used with the above-mentioned first embodiment figure 1 with figure 2 The method is the same as the figure showing the structure and manufacturing method of the nitride semiconductor multilayer substrate 10C according to the third embodiment of...

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Abstract

This method for producing a nitride semiconductor laminate comprises: a first nitride semiconductor layer formation step wherein a first nitride semiconductor layer (12) is formed on top of a substrate within a reactor; a second nitride semiconductor layer formation step wherein a second nitride semiconductor layer (13) is formed on top of the first nitride semiconductor layer (12); and a third nitride semiconductor layer formation step wherein a third nitride semiconductor layer (14), which has a larger band gap than the second nitride semiconductor layer (13), is formed on the upper surface of the second nitride semiconductor layer (13). The second nitride semiconductor layer formation step and the third nitride semiconductor layer formation step are carried out without interruption, and the third nitride semiconductor layer formation step follows the second nitride semiconductor layer formation step.

Description

technical field [0001] The present invention relates to a method for manufacturing a nitride semiconductor laminate represented by a semiconductor switching element such as a HEMT (High Electron Mobility Transistor: High Electron Mobility Transistor), and the nitride semiconductor laminate. Background technique [0002] Nitride semiconductors, which are group III-V compound semiconductors represented by GaN (gallium nitride), are expected to be applied to switching elements used in power devices and the like in recent years. This is because the nitride semiconductor has a band gap as large as about 3.4eV, an insulation breakdown electric field about 10 times higher, and an electron saturation speed about 2.5 times higher than the conventional semiconductor using Si (silicon). It is suitable for power devices. characteristic. Proposed in such as SiC (silicon carbide), Al 2 o 3 A GaN / AlGaN heterostructure switching element is provided on a substrate such as (sapphire) or Si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/338C23C16/34H01L21/20H01L21/205H01L29/778H01L29/812
CPCC23C16/301C23C16/303H01L21/02505H01L21/0262H01L29/7786H01L29/207H01L21/02458H01L21/0254H01L29/2003H01L21/02694H01L29/205H01L29/66462H01L29/7787
Inventor 田尻雅之伊藤伸之小河淳藤重阳介冈崎舞远崎学
Owner SHARP KK