Transistor devices and methods

Abstract

The present disclosure includes transistor devices and methods. In one embodiment, a transistor includes a gate, a source, and a drain. According to one aspect of the disclosure, different resistive paths in the drain are compensated using different gate-to-drain capacitances. According to another aspect of the disclosure, current enters a drain at a center tap point and flows symmetrically outward under two adjacent gates to two adjacent sources.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to US Application No. 14 / 486,969, filed September 15, 2014, the contents of which are hereby incorporated by reference in their entirety for all purposes. technical field [0003] The present disclosure relates to semiconductor devices and methods, and in particular to transistor devices and methods. Background technique [0004] The performance requirements placed on electronic circuits continue to gradually increase. The basic building block of almost all electronic circuits is the transistor. As transistors operate at even higher and higher speeds, parasitic effects within the device are increasingly becoming a problem. For example, when current flows through the terminals of a transistor device, the internal resistance can cause a voltage drop, which can drain the circuit's power and reduce the circuit's efficiency. This internal resistance can impose limitations on the size of t...

AI Technical Summary

Problems solved by technology

Existing solutions for reducing these parasitics and for managing high currents and voltages are not optimal for meeting the increasing demands of the electronics industry

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