A pulsed laser-assisted chemical vapor deposition growth system device and a method for preparing low-dimensional materials using it

A technology of chemical vapor deposition and pulsed laser deposition, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of poor quality, limited growth of high melting point materials, and failure to reach, etc., to achieve Effect of avoiding impurity introduction, improving growth efficiency and material type, overcoming limitations

Inactive Publication Date: 2019-05-14
BEIJING NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the evaporation source cannot reach the temperature of the PLD laser, the growth of high melting point materials is limited, and the quality is not as good as that of PLD.

Method used

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  • A pulsed laser-assisted chemical vapor deposition growth system device and a method for preparing low-dimensional materials using it
  • A pulsed laser-assisted chemical vapor deposition growth system device and a method for preparing low-dimensional materials using it
  • A pulsed laser-assisted chemical vapor deposition growth system device and a method for preparing low-dimensional materials using it

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] A pulsed laser assisted chemical vapor deposition growth system device, its structure schematic diagram is as follows figure 1 As shown, the meanings of the numbers in the figure are:

[0062] 1-first flange, 2-second flange, 3-third flange, 4-vacuum system, 5-vacuum system valve, 6-magnetic transmission rod, 7-high temperature resistant sample holder, 8-plasma plume Hui, 9-high temperature resistant target holder, 10-material boat, 11-high temperature resistant target rod, 12-motor, 13-laser beam, 14-focusing mirror, 15-pulse laser, 16-carrier gas 1, 17- Carrier gas 2, 18-carrier gas 3, 19-flow control meter, 20-vacuum gauge, 21-high temperature resistant substrate baffle, 22-laser baffle, 23-Y tube, 24-double temperature zone tube furnace , 25-exhaust gas purification device, 26-cooling system, 27-exhaust system.

[0063] This system device comprises pulsed laser (15), heating system, growth chamber, vacuum system (4), cooling system (26), carrier gas system and exh...

Embodiment 2

[0071] Using the system device of the present invention to prepare La by pulsed laser deposition 0.5 Sr 0.5 MnO 3 (LSMO) epitaxial thin film

[0072] The substrate material can choose lanthanum aluminate LaAlO 3 (LAO), you can also choose strontium titanate SrTiO 3 (STO), etc., as long as it meets the requirements of film growth, it can be used as the substrate material of the present invention to grow epitaxial films.

[0073] In this embodiment, choose LaAlO 3 As a substrate material, its crystal orientation is (001).

[0074] For substrate materials, pretreatment is required. In this example, LaAlO 3 For the substrate, the pretreatment step included ultrasonic cleaning with trichlorethylene for 7 min, followed by acetone for 5 min, alcohol for 1 min, and blowing with an air gun.

[0075] In this example, choose to prepare La 1-x Sr x MnO 3 , x=0.5.

[0076] For the target material, first grind it on coarse sandpaper, then grind it on fine sandpaper, then clean i...

Embodiment 3

[0091] Preparation of ZnO nanowires by chemical vapor deposition using the system device of the present invention

[0092] Put 20 grams of 99.99% pure ZnO powder on the center of the material boat, and adjust the position of the material boat to the center of the temperature zone.

[0093] Take a 10mm*10mm gold-plated silicon substrate, and ultrasonically wash the substrate with trichlorethylene, acetone and absolute ethanol respectively, each time for about 5 minutes, blow dry with a nitrogen gun, and place the cleaned substrate on a distance material 5cm from the boat (on the downstream side of the carrier gas).

[0094] The growth chamber was sealed and evacuated by the vacuum system to 10 -4 Pa, set the temperature program of the instrument, and rise to 1100°C in 110 minutes.

[0095] Open the oxygen valve, feed oxygen at a rate of 14mcc, oxygen pressure of 20Pa, growth time of 40min, close the oxygen valve, keep the oxygen pressure of the growth chamber at 20Pa, and coo...

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Abstract

The invention provides a pulse-laser-aided chemical vapor deposition growing system device and a method for preparing a low-dimension material through the same. The device comprises a laser device, a heating system, a growing chamber, a vacuum system, a cooling system, a gas carrying system and a gas exhausting system. The laser device is used for generating high-energy laser beams. The laser beams act with a target material of a source material to form plasma plumes. The growing chamber is a sealed Y-shaped pipe and can allow various physical / chemical reactions to be conducted sequentially or at the same time. A multi-temperature-zone tube furnace and a controllable heating method are adopted in the heating system, and the high-temperature environment is provided for growing of materials in the growing chamber. By means of the pulse-laser-aided chemical vapor deposition growing system device and the method for preparing the low-dimension material through the same, pulsed laser deposition and chemical vapor deposition can be conducted sequentially and also at the same time; laser, the temperature, the air pressure, reaction gas and the like can be regulated and controlled; a physical mode and a chemical mode are utilized separately or simultaneously to achieve growing of the materials such as high-quality multi-component thin films and the materials of heterojunction or nanostructures; and a material system can cover oxides, semiconductors, metals, complex structure thereof and the like.

Description

technical field [0001] The invention relates to the fields of thin film growth, heterojunction, nanowire material and material growth. More specifically, it relates to a material growth device for pulsed laser-assisted chemical vapor deposition and a combination of pulsed laser deposition and chemical vapor deposition, respectively or simultaneously, using physical / chemical methods to achieve high-quality multi-component thin films, heterojunctions, and nano Growth of materials such as structures. Background technique [0002] Functional materials are widely used, involving information technology, biotechnology, energy technology and other high-tech fields, from large-scale integrated circuits, electronic components, flat panel displays, information recording and storage, sensors and photovoltaic solar cells, involving various high-tech industries aspect. With the continuous development of the depth and breadth of material science research, in order to improve the performa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/48
Inventor 张金星宋创业
Owner BEIJING NORMAL UNIVERSITY
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