High-efficiency and high-power density isolation DC-DC (Direct Current-Direct Current) conversion circuit based on GaN

A high power density, conversion circuit technology, applied in the direction of DC power input conversion to DC power output, high-efficiency power electronic conversion, output power conversion device, etc., to improve the efficiency and power density of the converter, and improve the efficiency and power density Effect

Inactive Publication Date: 2017-05-24
ZHEJIANG UNIV
View PDF5 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But in the case of the same efficiency, the increase in power de

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-efficiency and high-power density isolation DC-DC (Direct Current-Direct Current) conversion circuit based on GaN
  • High-efficiency and high-power density isolation DC-DC (Direct Current-Direct Current) conversion circuit based on GaN
  • High-efficiency and high-power density isolation DC-DC (Direct Current-Direct Current) conversion circuit based on GaN

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The block diagram of the isolated DC-DC converter is as follows: figure 1 As shown, it consists of: GaNMOSFET half bridge, resonant inductor, resonant capacitor, transformer with turn ratio N:1:1, synchronous rectification GaNMOSFET, filter capacitor, Fly-back auxiliary power supply circuit, integrated LLC control UCC25600 chip circuit, driving UCC27714 circuit , Drive transformer, optocoupler and output feedback PI regulation circuit, PEM-2-S12-S5-D voltage conversion circuit, UCC24610 synchronous rectification control circuit. Among them, the high-voltage side device adopts GS66502B, and the low-voltage side device adopts GS61004B.

[0035] The primary side controller UCC25600 is a chip specially used for LLC resonant converter control produced by TI. The internal integrated oscillator supports switching frequency of 30-350kHz. The high-precision oscillator limits the difference of 4% in the minimum switching frequency, which can avoid the design beyond the power le...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-efficiency and high-power density isolation DC-DC (Direct Current-Direct Current) conversion circuit based on GaN. The high-efficiency and high-power density isolation DC-DC conversion circuit comprises an LLC (Liquid Level Control) half-bridge soft switch, a transformer with the turn ratio of N to 1 to 1, a filter capacitor, a Fly-back auxiliary power supply circuit, an integrated LLC control UCC25600 chip circuit, a driving UCC27714 circuit, an optical coupler and output feedback PI adjusting circuit, a PEM-2-S12-S5-D voltage conversion circuit and the like, wherein a primary edge adopts a GaN device GS66502B and a secondary edge adopts a GaN device GS61004B, and the primary edge and the secondary edge are arranged in parallel to carry out synchronous rectification; an LLC resonance circuit is combined with the synchronous rectification, and a simple design of a control and driving circuit and an auxiliary power supply is adopted and a wide-input voltage range is realized; constant output voltage is 12V and 200W DC-DC conversion is realized; the circuit adopts a GaN switching device so that the efficiency and power density of a converter are realized.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and relates to a high-efficiency, high-power-density isolated DC-DC conversion circuit based on GaN, in particular to an isolated DC-DC step-down circuit with wide-range input and constant output using GaN devices. Background technique [0002] DC-DC power supplies are widely used in military, industrial and daily life, but most of the current DC-DC converters are not particularly efficient, and the low efficiency is mainly caused by the unsatisfactory power electronic switching devices. Better devices will greatly benefit the efficiency of DC-DC converters, and are of great significance to energy conservation and environmental protection. DC-DC converters must be able to operate stably within the input voltage range and under different load conditions. Most applications require isolated DC-DC converters, so it is necessary to study isolated high-efficiency DC-DC converter solutions. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H02M3/338H02M3/335
CPCH02M3/33561H02M3/33592H02M3/3381Y02B70/10
Inventor 杨雁勇王正仕
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products