Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Transfer method of graphene film and base plate

A technology of graphene film and transfer method, which is applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., and can solve the problems of reduced adhesion, rupture of graphene film 20, difficulty in realizing transfer of large-size graphene film 20, etc. Achieve the effect of improving adhesion and realizing large size

Active Publication Date: 2017-05-31
BOE TECH GRP CO LTD
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the process of transferring the graphene film 20 coated with PMMA to the target substrate 40, because the PMMA material is relatively brittle, the graphene film 20 is easily broken, and when the graphene film 20 is attached to the target substrate 40 In the process, there is inevitably a gap between the two, so that the adhesion between the two is greatly reduced. Based on the above reasons, it is difficult to realize the transfer of large-scale graphene film 20.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transfer method of graphene film and base plate
  • Transfer method of graphene film and base plate
  • Transfer method of graphene film and base plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0034] The embodiment of the present invention provides a transfer method of graphene film, such as figure 2 shown, including the following steps:

[0035] S10, such as image 3 As shown, the support layer 30 is formed on the first substrate 50 on which the graphene film 20 is grown; the support layer 30 is formed on the side of the graphene film 20 away from the first substrate 50 .

[0036] Here, the support layer 30 is a transparent insulating material t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a transfer method of a graphene film and a base plate, relating to the technical field of display. The method can improve the phenomenon of cracking of the graphene film in the transfer process, enhances the adhesiveness of the graphene film on the target base plate, and implements transfer of the large-size graphene film. The method comprises the following steps: forming a support layer on a first substrate on which a graphene film is grown, wherein the support layer is formed on one side of the graphene film away from the first substrate; bonding the side of the first substrate with the support layer with the target base plate through a transparent adhesive layer; and removing the first substrate.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a graphene film transfer method and a substrate. Background technique [0002] Indium tin oxide (ITO) is widely used due to its high transmittance and low square resistance, but the price of indium in ITO is expensive, and the ITO material itself is relatively brittle, resulting in the use of transparent conductive films formed by ITO. The bending resistance is poor, so it is of great significance to find a transparent conductive material with low cost and good bending resistance. [0003] Graphene has the advantages of strong bending resistance, low cost, and excellent photoelectric properties. In recent years, research on graphene films as transparent conductive materials has exploded. Graphene is usually prepared by chemical vapor deposition (CVD). During the preparation process, metal materials are generally selected as the growth substrate of graphene, and graphene must be...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B32/194
Inventor 郭康
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com