A kind of organic field effect transistor material based on oxygen heterofused rings and its synthesis method and application

A synthesis method and organic field technology, applied in the field of organic field effect transistor materials and their synthesis, can solve the problems of reducing material solvent, increasing, unfavorable transformation and application, etc., achieve good solubility, improve mobility, and benefit The effect of film-forming control

Active Publication Date: 2019-01-08
SUZHOU JOYSUN ADVANCED MATERIALS CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the molecular rigidity is too strong, the accumulation between molecules will increase, which will reduce the solvent property of the material, which is not conducive to subsequent transformation and application.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of organic field effect transistor material based on oxygen heterofused rings and its synthesis method and application
  • A kind of organic field effect transistor material based on oxygen heterofused rings and its synthesis method and application
  • A kind of organic field effect transistor material based on oxygen heterofused rings and its synthesis method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A kind of synthetic method of organic field effect transistor material based on oxygen heterofused ring class is:

[0030] The first step: the synthesis of compound 1: In a 250mL round bottom flask, add diisopropylamine (4.76g, 46.1mmol) and 100mL tetrahydrofuran under the protection of argon, cool the mixed solution to -78°C, and then slowly add Add 19.2 mL of a hexane solution containing 2.4 M n-butyl lithium dropwise. After the dropwise addition, continue to stir for 40 minutes, then dissolve ethyl thiophene-3-carboxylate (6.01 g, 38.4 mmol) in 500 mL of tetrahydrofuran and slowly drop Added to the mixed solution, after the dropwise addition, the mixed solution continued to stir for 1 hour, then, 46.1 mL of hexane solution containing 1 M trimethyltin chloride was added dropwise to the reaction solution, and after 1 hour of reaction, the reaction solution was Warm up to room temperature and stir for 5 hours. After the reaction is complete, extract with ethyl acetate, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an organic field effect transistor material based on oxygen heterocondensed rings, its synthesis method and application. The preparation steps are as follows: react diisopropylamine, tetrahydrofuran, n-butyllithium, thiophene-3-ethyl carboxylate, and trimethyltin chloride, add 1,4-dibromo-2,5-dimethoxy, tetra Triphenylphosphine palladium reacts with anhydrous tetrahydrofuran, adds 1-bromo-4-hexylbenzene, anhydrous tetrahydrofuran, n-butyllithium solution, mixes with dichloromethane, adds boron tribromide solution, reacts with tetrahydrofuran, n-butyl lithium Reaction of butyllithium, trimethyltin chloride solution, and 4,7‑dibromo‑5,6‑difluoro‑2,1,3‑benzothiadiazole, tris(dibenzylideneacetone) dipalladium , Three (o-methylphenyl) phosphorus and anhydrous toluene can be obtained by reacting. The invention provides a series of field effect transistor materials which can realize high electron mobility, low recombination energy and good solubility by selecting different condensed ring units and acceptor units to polymerize.

Description

technical field [0001] The invention relates to the field of field effect transistors, in particular to an organic field effect transistor material based on oxygen heterofused rings and its synthesis method and application. Background technique [0002] Now that people have entered the information age, various electronic devices (such as mobile phones, computers, etc.) can be seen everywhere in our daily life, and field effect transistors are one of the extremely important electronic components. Compared with traditional field-effect-free crystal materials, organic field-effect transistor materials have the advantages of low cost, simple process, easy modification of material energy levels, good solubility, good flexibility and large-area flexible devices, and are more and more popular. s concern. However, the carrier mobility of current organic field effect transistor materials is far behind that of non-field effect transistor materials. How to improve the mobility of cur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C07D495/22H01L51/05H01L51/30
CPCC07D495/22H10K85/6576H10K85/6574H10K85/657H10K10/46
Inventor 李永玺吴福鹏廖良生
Owner SUZHOU JOYSUN ADVANCED MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products