A method of stealth cutting and back-plated LED chips

A LED chip and stealth cutting technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of unsatisfactory LED luminous efficiency and high shedding rate of the reflective layer, and achieve the effect of improving the light output efficiency and reducing the shedding probability

Active Publication Date: 2018-10-19
XIAN ZOOMVIEW OPTOELECTRONICS SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problems of high shedding rate of reflective layer and unsatisfactory LED luminous efficiency in the existing invisible cutting and back plating process, the present invention provides a method for manufacturing LED chips by invisible cutting and back plating

Method used

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  • A method of stealth cutting and back-plated LED chips

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Embodiment 1

[0032] A manufacturing method of invisible cutting and back plating of LED chips includes the following steps:

[0033] a. Growth of adhesion layer: growth of adhesion layer on the back of the wafer;

[0034] b. Film sticking: the front side of the wafer is facing up, and the back side is adhered to the white film;

[0035] c. Stealth cutting: Stealth cutting of wafers after filming;

[0036] d. Turn over: Turn the invisible cut wafer face down, and turn the back side up on another white film. Cut the area where the wafer is located, together with the white film.

[0037] e. Back-plated metal reflective layer: A metal reflective layer is plated on the adhesion layer on the back of the wafer;

[0038] f. Split: Split the wafer into a single LED chip.

[0039] In step a, an adhesion layer is grown on the sapphire substrate on the back of the wafer by PECVD technology, and the adhesion layer is SiO 2 Adhesive layer, the thickness of the adhesive layer is 10nm.

[0040] In step c, during steal...

Embodiment 2

[0044] A manufacturing method of invisible cutting and back plating of LED chips includes the following steps:

[0045] a. Growth of adhesion layer: growth of adhesion layer on the back of the wafer;

[0046] b. Film sticking: the front side of the wafer is facing up, and the back side is adhered to the white film;

[0047] c. Stealth cutting: Stealth cutting of wafers after filming;

[0048] d. Flip: Turn the invisible cut wafer face down, and turn the back side up on another white film. Cut the area where the wafer is located, together with the white film.

[0049] e. Back-plated metal reflective layer: A metal reflective layer is plated on the adhesion layer on the back of the wafer;

[0050] f. Split: Split the wafer into a single LED chip.

[0051] In step a, an adhesion layer is grown on the sapphire substrate on the back of the wafer by PECVD technology, and the adhesion layer is Si 3 N 4 Adhesive layer, the thickness of the adhesive layer is 230nm.

[0052] In step c, during stealt...

Embodiment 3

[0056] A manufacturing method of invisible cutting and back plating of LED chips includes the following steps:

[0057] b. Film sticking: the front side of the wafer is facing up, and the back side is adhered to the white film;

[0058] c. Stealth cutting: Stealth cutting of wafers after filming;

[0059] d. Turn over: Turn the invisible cut wafer face down, and turn the back side up on another white film. Cut the area where the wafer is located, together with the white film.

[0060] e. Back-plated metal reflective layer: a metal reflective layer is plated on the adhesion layer on the back of the wafer;

[0061] f. Splitting: Split the wafer into a single LED chip.

[0062] In step a, an adhesion layer is grown on the sapphire substrate on the back of the wafer by PECVD technology, and the adhesion layer is Si 3 N 4 Adhesive layer, the thickness of the adhesive layer is 100 nm.

[0063] In step c, during stealth cutting, the laser pulse frequency is 80 Hz, and the scribing speed is 100 m...

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Abstract

The invention relates to the processing field of a semiconductor, and discloses a manufacturing method of invisible cutting and back plating LED chips; the technical point includes steps of performing chemical brightening, growth of adhesion layer, pad pasting, invisible cutting, overturning, back plating of a metal reflecting layer and a crack piece on a wafer; finally, acquiring the LED chips, wherein the wafer and a white film are bonded during the invisible cutting, thus the wafer and the white film are burned by laser; impurities generated by gasification and expansion of a sapphire substrate cannot spray on the back face of the wafer on a large area, and only can exist in a crack, thus the back face pollution is reduced, and the drop rate of the back plating layer is lowered; through growing an adhesion layer on the sapphire substrate, the dropping probability of the back plating layer is reduced from 20% in the past to 0.5%, a part of light can form full emission at a border, thus the LED lighting efficiency is improved on a certain level, and the effect is promoted by about 10%. The method solves the problem of high dropping rate of the reflecting layer and not ideal LED lighting efficiency in the existed invisible cutting and back plating technique.

Description

Technical field [0001] The invention relates to the field of semiconductor processing, in particular to a manufacturing method of invisible cutting and back plating of LED chips. Background technique [0002] Stealth cutting is a laser scribing technology that has been applied to LEDs in recent years. It reduces the burn area of ​​the LED side and reduces the absorption of the light emitted by the LED chip by the light-absorbing material produced by laser burning, so as to improve the light-emitting efficiency of the LED. Invisible cutting technology can be used to replace traditional surface cutting technology. Compared with traditional cutting technology, invisible cutting technology can increase product brightness by about 7% and increase product appearance yield by about 0.5%. The specific stealth cutting is a method of using lasers to focus inside the LED chip, burning the sapphire substrate at a certain frequency to instantly vaporize and expand, and then cut the chip. The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/22H01L33/46
CPCH01L33/005H01L33/22H01L33/46
Inventor 杨路华陈勘闫秋迎魏萍
Owner XIAN ZOOMVIEW OPTOELECTRONICS SCI & TECH
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