Unlock instant, AI-driven research and patent intelligence for your innovation.

Temporary bonding and debonding technology of device wafer

A device wafer and wafer bonding technology, which is applied in the manufacturing of electrical solid state devices, semiconductor devices, and semiconductor/solid state devices. effect of difficulty

Inactive Publication Date: 2017-06-13
深圳市化讯半导体材料有限公司
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Temporary bonding and debonding technology solves the problem of thin wafer holding and fragmentation during the process, but due to many unstable factors during wafer separation, there is also a great risk of fragmentation during wafer separation
At present, the processing methods of wafer separation include laser processing, thermal sliding, and Zonebond mechanical key removal, but there are certain defects.
Laser processing is limited by the fact that the carrier wafer must be glass, so the application occasions are limited, and the equipment is expensive; thermal slip separation at high temperature causes certain warpage and certain risk of fragmentation of the separated thin wafer; based on Zonebond technology The mechanical debonding is currently more popular, but the disadvantage is that the pre-soaking time before debonding is long, there is mechanical stress for debonding, and it is difficult to avoid expensive equipment costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Temporary bonding and debonding technology of device wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] 1) Temporary bonding:

[0047] Carry out front-side processing of 8-inch device wafers, and prepare TSVs, metal interconnections and micro-bumps on the front side. Then spin-coat a layer of bonding glue Samcien on the front of the device wafer TM WLP CB1228, the rotation speed is 900rpm, after baking and curing, the curing process is 115°C, 5 minutes, then 150°C, 5 minutes, the thickness of the adhesive layer after curing is 15um.

[0048] Spin-coat a layer of edge ring adhesive Samcien on the front side of the carrier wafer TM WLP CB1212, the rotation speed is 700rpm, its width is 1.5mm, after baking and curing, the curing process is 115°C, 3 minutes, then 150°C, 3 minutes, and then spin-coat a layer of anti-adhesive material Samcien on the remaining area of ​​the carrier wafer TM WLP CB3100, the rotation speed is 800rpm, after baking and curing, the curing process is 150 ℃, 15 minutes, the thickness of this layer of material after curing is 25nm, and then use the...

Embodiment 2

[0056] 1) Temporary bonding:

[0057] Carry out front-side processing of 8-inch device wafers, and prepare TSVs, metal interconnections and micro-bumps on the front side. Then spin-coat a layer of bonding glue Samcien on the front of the device wafer TM WLP CB1228, the rotation speed is 1100rpm, after baking and curing, the curing process is 115°C, 5 minutes, then 150°C, 5 minutes, the thickness of the adhesive layer after curing is 12um.

[0058] Spin-coat a layer of edge ring adhesive Samcien on the front side of the carrier wafer TM WLP CB1212, the rotation speed is 800rpm, its width is 1mm, after baking and curing, the curing process is 115°C, 3 minutes, then 150°C, 3 minutes, and then spin-coat a layer of anti-adhesive material Samcien on the remaining area of ​​the carrier wafer TM WLP CB3100, the rotation speed is 700rpm, after baking and curing, the curing process is 150 ℃ for 15 minutes, the thickness of this layer of material after curing is 27nm, and then use t...

Embodiment 3

[0066] 1) Temporary bonding:

[0067] The front side processing process is performed on the 12-inch device wafer, and TSVs, metal interconnections and micro-bumps are prepared on the front side. Then spin-coat a layer of bonding glue Samcien on the front of the device wafer TM WLP CB1228, the rotation speed is 1200rpm, after baking and curing, the curing process is 115°C, 5 minutes, then 150°C, 5 minutes, the thickness of the adhesive layer after curing is 11um.

[0068] Spin-coat a layer of edge ring adhesive Samcien on the front side of the carrier wafer TM WLP CB1212, the rotation speed is 800rpm, its width is 1.5mm, after baking and curing, the curing process is 115°C, 3 minutes, then 150°C, 3 minutes, and then spin-coat a layer of anti-adhesive material Samcien on the remaining area of ​​the carrier wafer TM WLP CB3100, the rotation speed is 900rpm, after baking and curing, the curing process is 150 ℃, 15 minutes, the thickness of this layer of material after curing ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of microelectronic packaging, in particular to a temporary bonding and debonding technology of a device wafer. The temporary bonding and debonding technology comprises the following steps of (a) arranging a bonding adhesive layer at the front surface of the device wafer, and arranging an anti-adhering layer at the non-edge area of the front surface of a slide wafer; (b) bonding the device wafer with the bonding adhesive layer and the slide wafer with the anti-adhering layer, so as to obtain a temporary wafer bonding pair, wherein in the temporary wafer bonding pair, the anti-adhering layer is positioned in the bonding adhesive layer, and the bonding adhesive layer is in contact with the edge area of the front surface of the slide wafer; (c) processing the back surface of the device wafer in the temporary wafer bonding pair; (d) soaking the processed temporary wafer bonding pair into an adhesive dissolving agent, enabling the adhesive dissolving agent to dissolve the bonding adhesive layer under the aiding function of sound wave, and separating the device wafer and the slide wafer under the vibration function of sound wave. The temporary bonding and debonding technology can solve the problems of perforating of the substrate, long soaking time, and the like in the temperature bonding and chemical debonding process of the traditional device wafer.

Description

technical field [0001] The invention relates to the field of microelectronic packaging, in particular to a temporary bonding and debonding process of device wafers. Background technique [0002] With the development of the economy and the improvement of people's living standards, people's requirements for electronic products tend to be miniaturized, multi-functional and environmentally friendly. The miniaturization of electronic products essentially requires more and newer scientific and technological achievements to be condensed in its products, and technology should be solidified in products to a greater extent to increase the proportion of technical information content. Therefore, people strive to make electronic systems smaller and smaller, with higher and higher integration levels, more and more functions, and stronger and stronger. To meet these needs, the semiconductor industry needs to thin the device wafer to 100um or below. Ultra-thin wafers have characteristics s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/60H01L21/607
CPCH01L24/03H01L24/09H01L2224/038H01L2224/091
Inventor 张新学黎小海夏建文黄明起
Owner 深圳市化讯半导体材料有限公司