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NAND flash memory storage unit, NAND flash memory and forming method thereof

A technology of flash storage and flash memory, which is applied in the field of NAND flash memory storage units, and can solve problems such as high production costs

Active Publication Date: 2017-06-13
SHANGHAI FUDAN MICROELECTRONICS GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, in the existing three-dimensional NAND flash memory, the reading reliability of the memory cell array needs to be improved, the data density needs to be improved, and the manufacturing cost is high

Method used

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  • NAND flash memory storage unit, NAND flash memory and forming method thereof
  • NAND flash memory storage unit, NAND flash memory and forming method thereof
  • NAND flash memory storage unit, NAND flash memory and forming method thereof

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Embodiment Construction

[0077] As mentioned in the background, in the existing three-dimensional NAND flash memory, the reading reliability of the memory cell array needs to be improved, and the data density needs to be improved.

[0078] For this reason, the present invention provides a kind of new NAND flash storage unit, and described NAND flash memory storage unit comprises semiconductor substrate; The first fin portion that is positioned at described semiconductor substrate; To the first stacked isolation layer, the first stacked structure, the second isolation layer and the second stacked structure; the first stacked structure includes a first source layer, a first channel layer and a first drain layer; The second stack structure includes a second source layer, a second channel layer and a second drain layer. The first source layer, the first channel layer and the first drain layer of the NAND flash memory storage unit are vertically stacked, therefore, the NAND flash memory storage unit has a ...

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Abstract

The invention discloses an NAND flash memory storage unit, an NAND flash memory and a forming method thereof. The NAND flash memory storage unit comprises a semiconductor substrate and a first fin part positioned on the semiconductor substrate, wherein the first fin part at least comprises a first isolated layer, a first laminated structure, a second isolated layer and a second laminated structure which are laminated from bottom to top; the first laminated structure comprises a first source layer, a first channel layer and a first drain layer; and the second laminated structure comprises a second source layer, a second channel layer and a second drain layer. The NAND flash memory storage unit has great capability of continuous process dimension reduction, and can solve the problem of reading interference of the storage unit from the aspect of device structure. Meanwhile, the forming method of the NAND flash memory is simple, and the process cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a NAND flash memory storage unit, a NAND flash memory and a forming method thereof. Background technique [0002] NAND flash memory (NAND flash) is a kind of non-volatile flash memory. Its main function is to store data. It has high storage cell density and fast writing and erasing speed. At the same time, the storage cell size of NAND flash memory is almost the same as that of NOR flash memory storage cell. It can provide higher capacity within a given mold size, and is currently mainly used in digital camera flash memory cards and MP3 players. [0003] A kind of storage unit of existing NAND flash memory such as figure 1 As shown, there is a channel layer 110 on a semiconductor substrate (not shown), and a tunneling dielectric layer 120, a floating gate 130, a gate dielectric layer 140, and a control gate 150 are sequentially arranged on the channel layer 110, and th...

Claims

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Application Information

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IPC IPC(8): H01L27/11524
CPCH10B41/35
Inventor 黄新运肖磊刘红霞徐烈伟沈磊刘崎
Owner SHANGHAI FUDAN MICROELECTRONICS GROUP
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