A gallium oxide-based metal-oxide semiconductor field-effect transistor and its preparation method

Abstract

The invention belongs to the technical field of preparation of a semiconductor device, and provides a gallium oxide-based metal-oxide semiconductor field effect transistor and a preparation method therefor. Semi-insulated gallium oxide single crystals are used as a substrate, and a non-doped gallium oxide layer, a tin layer and a patterned tin layer are arranged on the surface of the substrate in sequence; an oxide dielectric layer is arranged on the surface, which is not covered with the patterned tin layer, of the tin layer; openings in pairs are formed between the oxide dielectric layer and the patterned tin layer, and the opening region is smaller than the patterned tin layer region; a titanium layer and a gold layer are arranged on the surface of the opening region to be used as a source electrode and a drain electrode respectively; and a titanium layer and a gold layer are arranged on the surface of the oxide dielectric layer in sequence to be used as gate electrodes. The invention provides an effective, simple and convenient technological manufacturing technology, the difficulty in preparation of the high-performance gallium oxide-based metal-oxide semiconductor field effect transistor is solved, and development of the novel gallium oxide-based metal-oxide semiconductor field effect transistor is realized.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device preparation, and relates to a gallium oxide-based metal-oxide semiconductor field effect transistor and a preparation method thereof. Background technique [0002] The third-generation wide-bandgap semiconductor materials represented by gallium oxide are widely used in high-frequency, high-power, It has important applications in electronic devices such as radiation resistance. In particular, gallium oxide has a band gap as high as 4.9eV and a breakdown electric field of 3.5×10 6 V / cm, and having a larger Barriga figure of merit than silicon carbide and gallium nitride, has become an important candidate material for the development of power semiconductor devices. At present, there are few studies on gallium oxide-based metal-oxide semiconductor field effect transistors, the device structure and oxide dielectric layer materials are relatively simple, and the preparation process is imm...

AI Technical Summary

Problems solved by technology

At present, there are few studies on gallium oxide-based metal-oxide semiconductor field effect transistors, the device structure and oxide dielectric layer materials are relatively simple, and the preparation process is immature

Especially in the preparation of high-performance source and drain electrodes, local heavy doping is performed by ion implantation, which greatly damages the gallium oxide crystal lattice. Although good contact characteristics are obtained, the appearance of lattice defects significantly increases the loading capacity. Carrier transport loss, especially under high power conditions, the thermal effect caused by carrier loss will have a great impact on device performance, and may even lead to device damage

In addition, ion implantation equipment is expensive, the process conditions are harsh, and the process is complicated

All of the above are not conducive to the development of high-performance gallium oxide-based metal-oxide semiconductor field-effect transistors

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